The GP2400ESM12 is a single switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor (IGBT) module. Designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion. The high impedance gate simplifies gate drive considerations enabling operation directly from low power control circuitry.

FEATURES

■ n - Channel Enhancement Mode

■ Non Punch Through Silicon

■ High Gate Input Impedance

■ Optimised For High Power High Frequency Operation

■ Isolated MMC Base with AlN

■ 1200V Rating

■ 2400A Per Module

APPLICATIONS

■ High Power Switching

■ Motor Control

■ Inverters

■ Traction Drives