Dual N-Channel MOSFET

GSM 4 W power amplifier

GENERAL DESCRIPTION The CGY2013G is a GSM class 4 GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically designed to operate at 3.6 V battery supply. The PA requires only a 30 dB harmonic low-pass filter to comply with the GSM transmit spurious specification. It can be

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

Integrated Circuit 7-Channel Darlington Array/Driver

Description: The NTE2011 through NTE2015 are high–voltage, high–current Darlington arrays in a 16–Lead DIP type package and are comprised of seven silicon NPN Darlington pairs on a common monolithic sub strate. All units have open–collector outputs and integral diodes for inductive load transie

Adaptive allocation and scaling for PASC coding in DCC systems

GENERAL DESCRIPTION The SAA2013 performs the adaptive allocation and scaling function in the Precision Adaptive Sub-band Coding (PASC) system. It is not required in playback only applications, and is only used during recording. To complete the PASC processor, a SAA2003 stereo filter and codec is

Adaptive allocation and scaling for PASC coding in DCC systems

GENERAL DESCRIPTION The SAA2013 performs the adaptive allocation and scaling function in the Precision Adaptive Sub-band Coding (PASC) system. It is not required in playback only applications, and is only used during recording. To complete the PASC processor, a SAA2003 stereo filter and codec is