Infrared Emitting Diode

■ Features 1. Side view emission type 2. Plastic mold with resin lens 3. Medium directivity angle (Δθ: ±13° TYP.) Peak emission wavelength: 950 nm TYP. 4. Radiant flux φe: 0.7 mW MIN. 5. Lead free and RoHS directive component ■ Applications 1. Office automation equipment 2. Audio visual eq

封装/外壳：径向 包装：散装 描述：EMITTER IR 950NM 50MA RADIAL 光电器件 LED 发射器 - 红外，紫外，可见光

Optoelectronics

Optoelectronics

Optoelectronics

NPN wideband transistor

DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a 4-pin dual-emitter SOT343R plastic package. FEATURES • High power gain • High efficiency • Low noise figure • High transition frequency • Emitter is thermal lead • Low feedback capaci

丝印代码：P6；NPN wideband transistor

DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a 4-pin dual-emitter SOT343R plastic package. FEATURES • High power gain • High efficiency • Low noise figure • High transition frequency • Emitter is thermal lead • Low feedback capaci

Silicon NPN Transistor RF Power Output for Broadband Amp, PO = 40W @ 512MHz

Description: The NTE480 is a 12.5 Volt epitaxial silicon NPN common emitter transistor designed for broadband applications in the 450 to 512MHz land mobile radio band. This device utilizes diffused emitter resistors to withstand infinite VSWR under operating conditions. Features: • Desi

Metal Oxide Varistors (MOV)

Description: The NTE Metal Oxide Varistors feature a barrier layer that gives the user fast response time. These devices have a high transient current handling capability when high voltage is applied. Static resistance is, however, very high under low voltage conditions, permitting low standby

Shottky barrier diode

Features High reliability Small mold type Low VF Application Small current rectification