BIDIRECTIONAL EMISSION TYPE INFRARED LIGHT EMITTING DIODE

Bidirectional Emission Type Infrared Light Emitting Diode Applications 1. Light source for tape-end detectors of VHS type VCRs

Bidirectional Emission Type Infrared Emitting Diode

Bidirectional Emission Type Infrared Light Emitting Diode Applications 1. Light source for tape-end detectors of VHS type VCRs

光敏电阻

光敏电阻是一种半导体材料制成的电阻，其电导率随着光照度的变化而变化。利用这一特性制成不同形状和受光面积的光敏电阻。光敏电阻广泛应用于玩具、灯具、照相机等行业。 • 环氧树脂封装\n• 可靠性好\n• 体积小\n• 灵敏度高\n• 反应速度快\n• 光谱特性好;

光敏电阻

光敏电阻是一种半导体材料制成的电阻，其电导率随着光照度的变化而变化。利用这一特性制成不同形状和受光面积的光敏电阻。光敏电阻广泛应用于玩具、灯具、照相机等行业。 • 环氧树脂封装\n• 体积小\n• 反应速度快\n• 光谱特性好;

光敏电阻

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 80 Watts Minimum Gain = 12 dB Efficiency = 50

P-Channel Enhancement Mode Field Effect Transistor

General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

P-Channel Enhancement Mode Field Effect Transistor

General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

SURFACE MOUNT SILICON ZENER DIODES

VZ : 2.7 - 200 Volts PD : 2 Watts FEATURES : * Complete Voltage Range 2.7 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES * 140 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt