位置：首页 > IC中文资料第8769页 > GL2305
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
P-CHANNEL ENHANCEMENT MODE POWER MOSFET 文件：270.44 Kbytes Page：4 Pages | GTM 勤益投资控股 |   | ||
P-CHANNEL ENHANCEMENT MODE POWER MOSFET | GTM 勤益投资控股 | | ||
Silicon Complementary Transistors High Voltage Power Amplifier Description: The NTE2305 (NPN) and NTE2306 (PNP) are silicon complementary transistors in a TO218 type package designed for use in high power audio amplifier applications and high voltage switching regulator circuits. Features: • High Collector–Emitter Sustaining Voltage: VCEO(sus) = 16 | NTE | | ||
丝印代码：A5***；P-Channel 1.25-W, 1.8-V (G-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFETs: 1.8 V Rated | VISHAYVishay Siliconix 威世威世科技公司 | | ||
PLLatinumTM 550 MHz Frequency Synthesizer for RF Personal Communications 文件：228.09 Kbytes Page：14 Pages | NSC 国半 | | ||
PLLatinumTM 550 MHz Frequency Synthesizer for RF Personal Communications 文件：228.09 Kbytes Page：14 Pages | NSC 国半 | | ||
PLLatinumTM 550 MHz Frequency Synthesizer for RF Personal Communications 文件：228.09 Kbytes Page：14 Pages | NSC 国半 | |
GL2305产品属性
- 类型
描述
- 型号
GL2305
- 制造商
GTM
- 制造商全称
GTM
- 功能描述
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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DdatasheetPDF页码索引
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