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60V N-Channel Enhancement Mode Power MOSFET

Features VDS = 60V,ID =20A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired

UMW

友台半导体

60V N-Channel Enhancement Mode Power MOSFET

General Description The 20N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =20A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology

EVVOSEMI

翊欧

N-Channel 60-V (D-S) MOSFET

文件:897.38 Kbytes Page:6 Pages

VBSEMI

微碧半导体

Fast Switching

文件:67.37 Kbytes Page:2 Pages

ISC

无锡固电

20A mps,60 Volts N-CHANNEL MOSFET

文件:193.72 Kbytes Page:2 Pages

CHONGQING

平伟实业

更新时间:2026-1-2 23:01:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
GT/YGMOS
24+
NA/
93250
原装现货,当天可交货,原型号开票
SOT252
23+
NA
15659
振宏微专业只做正品,假一罚百!
ON
21+
TO252
10000
只做原装,质量保证
ON
24+
TO-251
2
VBsemi
24+
TO252
9000
只做原装正品 有挂有货 假一赔十
ANALOGPO
24+
TO252
5000
郑重承诺只做原装进口现货
AOS
16+
TO-252
980
进口原装现货/价格优势!
ON/FAI
NEW
TO-251
9000
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
ON
24+
TO252
12800
原装正品现货支持实单
UMW(友台半导体)
25+
DIP
2200
国产替换现货降本

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