位置:首页 > IC中文资料第4520页 > GI820
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
GI820 | Fast Switching Plastic Rectifier FEATURES • Fast switching for high efficiency • Low forward voltage drop • Low leakage current • High forward current operation • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC | VISHAYVishay Siliconix 威世威世科技公司 | ||
GI820 | Fast Switching Plastic Rectifier FEATURES • Fast switching for high efficiency • Low forward voltage drop • Low leakage current • High forward current operation • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com | VISHAYVishay Siliconix 威世威世科技公司 | ||
GI820 | FAST SWITCHING PLASTIC RECTIFIER Reverse Voltage - 50 to 800 Volts Forward Current - 5.0 Amperes FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High surge current capability ♦ High forward current operation ♦ Fast switching for high efficiency ♦ Construction utilizes void- | GE | ||
Fast Switching Plastic Rectifier FEATURES • Fast switching for high efficiency • Low forward voltage drop • Low leakage current • High forward current operation • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com | VISHAYVishay Siliconix 威世威世科技公司 | |||
封装/外壳:P600,轴向 包装:卷带(TR)剪切带(CT) 描述:DIODE GEN PURP 50V 5A P600 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | ||
N-CHANNEL Enhancement-Mode Silicon Gate TMOS Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS TMOS POWER FETs 2 and 2.5 AMPERES rDS(on) = 3 OHM 450 and 500 VOLTS rDS(on) = 4 OHM 450 VOLTS | MOTOROLA 摩托罗拉 | |||
8/16-bit Data Bus Flash Memory Card DESCRIPTION The MF8XXX-GMCAVXX is a flash memory card which uses eight-megabit or sixteen megabit flash electrically erasable and programmable read only memory IC’s as common memory and a 64-kilobit electrically erasable and programmable read only memory as attribute memory. The MF8XXX-GNCAVXX i | MITSUBISHI 三菱电机 | |||
JFET RF AMPLIFIER JFET RF AMPLIFIER N-CHANNEL - DEPLETION | MOTOROLA 摩托罗拉 | |||
ULTRAFAST RECTIFIERS 8 AMPERES 200-400-600 VOLTS . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Time • 175°C Operating Junction Temperature • Popular TO–220 Package • Epoxy Meets U | MOTOROLA 摩托罗拉 | |||
ULTRAFAST RECTIFIER 8 AMPERES 200 VOLTS SWITCHMODE Power Rectifier Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 35 ns Recovery Times • 150°C Operating Junction Temperature • Epoxy Meets UL94, VO @ 1/8″ • High Temperature | MOTOROLA 摩托罗拉 |
GI820产品属性
- 类型
描述
- 型号
GI820
- 制造商
Vishay Semiconductors
- 功能描述
Diode Switching 50V 5A 2-Pin Case P600
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
GI |
23+ |
NA |
390 |
专做原装正品,假一罚百! |
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GI820数据表相关新闻
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深圳科雨电子有限公司,联系人:卢小姐 手机:18975515225 原装正品 大量现货,有需要的可以联系我 QQ:97877805 微信:wei555222777
2019-8-14
DdatasheetPDF页码索引
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