N-CHANNEL ENHANCEMENT MODE POWER MOSFET

BVDSS 30V RDS(ON) 21mΩ ID 36A Description The GI40N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The through-hole version (TO-251) is available for low-profile applications and suited for low v

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

N-Channel Logic Level E nhancement Mode F ield E ffect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

N-Channel Logic Level E nhancement Mode F ield E ffect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

N CHANNEL ENHANCEMENT MODE POWER MOSFET

Power MOSFETs from Silicon Standardprovide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is widelypreferred for commercialand industrial applications and suited for low voltage applications su

Power MOSFET 45 Amps, 25 Volts

文件：65.76 Kbytes Page：8 Pages

Power MOSFET 45 Amps, 25 Volts

文件：65.76 Kbytes Page：8 Pages