Ultrafast Plastic Rectifier

FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low leakage current • High forward surge capability • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS     For use in

Ultrafast Plastic Rectifier

FEATURES • Power pack • Glass passivated pellet chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low leakage current • High forward surge capability • Solder dip 275 °C max., 10 s per JESD 22-B106 • Material categorization: for definitions of compliance pl

Ultrafast Plastic Rectifier

FEATURES • Power pack • Glass passivated pellet chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low leakage current • High forward surge capability • Solder dip 275 °C max., 10 s per JESD 22-B106 • Material categorization: for definitions of compliance pl

FAST EFFICIENT PLASTIC RECTIFIER

Reverse Voltage - 50 to 200 Volts Forward Current - 8.0 Amperes FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Glass passivated chip junction ♦ Low power loss ♦ Low leakage current ♦ High surge capability ♦ Superfast recovery time for high efficie

Ultrafast Plastic Rectifier

Power pack\nGlass passivated pellet chip junction\nUltrafast recovery time;

Ultrafast Plastic Rectifier

FEATURES • Power pack • Glass passivated pellet chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low leakage current • High forward surge capability • Solder dip 275 °C max., 10 s per JESD 22-B106 • Material categorization: for definitions of compliance pl

Ultrafast Plastic Rectifier

FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low leakage current • High forward surge capability • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS     For use in

Ultrafast Plastic Rectifier

FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low leakage current • High forward surge capability • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS     For use in

封装/外壳：TO-220-2 包装：带盒（TB） 描述：DIODE GEN PURP 50V 8A TO220AC 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：TO-220-2 包装：卷带（TR） 描述：DIODE GEN PURP 50V 8A TO220AC 分立半导体产品 二极管 - 整流器 - 单

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetim

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planer transistor For general amplification ■ Features ● Two elements incorporated into one package. (Emitter-coupled transistors) ● Reduction of the mounting area and assembly cost by one half.

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planar type For general amplification ■ Features • Two elements incorporated into one package (Emitter-coupled transistors) • Reduction of the mounting area and assembly cost by one half

Silicon NPN Phototransistors

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Power plug for the universal mains

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