NPN EPITAXIAL PLANAR TRANSISTOR

Description The GIJ1060 is designed for relay drivers, high-speed inverters, converters and other general large-current switching. Features • Low Collector-Emitter Saturation Voltage : VCE (sat) =0.4V (Max.) @ IC=3A, IB=0.3A,

N P N E P I T A X I A L P L A N A R T R A N S I S T O R

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NPN EPITAXIAL PLANAR TRANSISTOR

SWITCHMODE??Power Rectifiers

SCHOTTKY BARRIER RECTIFIERS 10 AMPERES 60 to 100 VOLTS . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guard–Ring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guara

Integrated Circuit AM-RF Amp, Mix/OSC, FM-AM IF Amp

Description: The NTE1060 is an integrated circuit designed for FM/AM radio receiver applications. The AM section consists of an AM–RF amplifier, a frequency converter and an IF amplifier circuit. The FM section has an IF amplifier circuit. Features: ● Improved Stability because the FM and AM Se

SCHOTTKY BARRIER RECTIFIERS(VOLTAGE- 20 to 100 Volts CURRENT - 10.0 Ampere)

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, high current capability • High surge capacity.

2.5 V HIGH PRECISION REFERENCE VOLTAGE CIRCUIT

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

2.5 V HIGH PRECISION REFERENCE VOLTAGE CIRCUIT

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N