Ultra Fast Sinterglass Diode

Features • High temperature metallurgically bonded construction • Glass passivated cavity-free junction • Superfast recovery time for high efficiency • Low forward voltage, high current capability • Hermetically sealed package • High surge capability

GLASS PASSIVATED FAST EFFICIENT RECTIFIER

FEATURES ♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free junction ♦ Superfast recovery time for high efficiency ♦ Low forward voltage, high current capability ♦ Capable of meeting environmental standards of MIL-S-19500 ♦ Hermetically sealed package ♦ Lo

GLASS PASSIVATED FAST EFFICIENT RECTIFIER

HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes FEATURES ● Electrically Isolated Metal Case for Maximum Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● These bridges are on the U/L Recognized Products List for currents of 10, 25 and 35 amperes MECHANICAL DATA

SUPERFAST RECOVERY RECTIFIERS(VOLTAGE: 50 to 400 Volts CURRENT: 10.0 Amperes)

VOLTAGE 50 to 600 Volts CURRENT 10 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, hig

Medium-Power Complementary Silicon Transistors

Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 6000 (Typ) @ IC = 3.0 Adc • Monolithic Construction with Built–in Base–Emitter Shunt Resistors

10-Bit P Compatible A/D Converter

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10-Bit P Compatible A/D Converter

文件：201.08 Kbytes Page：9 Pages