位置：首页 > IC中文资料第4100页 > GFP50N03
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
GFP50N03 | N-Channel Enhancement-Mode MOSFET Features • Advanced Process Technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for Low Voltage DC/DC Converters • Fast Switching for High Efficiency | GE |   | |
N-Channel 30 V (D-S) MOSFET FEATURES • TrenchFET® power MOSFET • Package with low thermal resistance • 100 Rg and UIS tested | VBSEMI 微碧半导体 | | ||
30V, 50A N-CHANNEL,FAST SWITCHING MOSFET DESCRIPTION FEATURE The AM50N03 is available in PDFN8(3.3x3.3) FEATURE Super Low Gate Charge Excellent CdV/dt Effect Decline Advanced High Cell Density Trench Technology APPLICATION High frequency switching mode power supply | AITSEMI 创瑞科技 | | ||
N-Channel 30-V (D-S) MOSFET 文件：959.96 Kbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
50 Amps, 30 Volts N-CHANNEL MOSFET 文件：61.49 Kbytes Page：3 Pages | KIA 可易亚半导体 | | ||
N-Channel 30-V (D-S) MOSFET 文件：1.01805 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | |
GFP50N03产品属性
- 类型
描述
- 型号
GFP50N03
- 功能描述
MOSFET USE 781-SUP45N03-13L
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
通用 |
23+ |
45456 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
||||
VISHAY |
24+ |
TO-220 |
27500 |
原装正品,价格最低! |
|||
VISHAY |
1932+ |
TO-220 |
224 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
VISHAY |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
VISHAY/威世 |
2022+ |
TO-220 |
68500 |
原厂代理 终端免费提供样品 |
|||
VISHAY/威世 |
24+ |
TO220 |
22055 |
郑重承诺只做原装进口现货 |
|||
VISHAY |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
|||
GSI |
23+ |
120000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
VISHAY/威世 |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
FAIRCHILD/仙童 |
2447 |
TO-220 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
GFP50N03规格书下载地址
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瀚佳科技(深圳)有限公司 专业为工厂一站式BOM配单服务
2019-4-16
DdatasheetPDF页码索引
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