N Channel Power MOSFET with low RDS(on)

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N Channel Power MOSFET with low RDS(on)

Power MOSFET(Vdss=500V, Rds(on)=0.60ohm, Id=11A)

DESCRIPTION Third Generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast S

N-Channel 100-V (D-S) MOSFET

Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • LED Inverter Circuits • DC/DC Conversion Circuits • Motor drives

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD448 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOD448 is Pb-free (meets ROHS & Sony 259 specifications). AO

Linear motion 0.2 watt composition slide control

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Surface Mount Fuses

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