位置：首页 > IC中文资料第3453页 > GFB50N03
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
GFB50N03 | N-Channel Enhancement-Mode MOSFET 文件：109.23 Kbytes Page：5 Pages | GE |   | |
GFB50N03 | N-Channel Enhancement-Mode MOSFET | GE | | |
N-Channel 30 V (D-S) MOSFET FEATURES • TrenchFET® power MOSFET • Package with low thermal resistance • 100 Rg and UIS tested | VBSEMI 微碧半导体 | | ||
30V, 50A N-CHANNEL,FAST SWITCHING MOSFET DESCRIPTION FEATURE The AM50N03 is available in PDFN8(3.3x3.3) FEATURE Super Low Gate Charge Excellent CdV/dt Effect Decline Advanced High Cell Density Trench Technology APPLICATION High frequency switching mode power supply | AITSEMI 创瑞科技 | | ||
N-Channel 30-V (D-S) MOSFET 文件：959.96 Kbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
50 Amps, 30 Volts N-CHANNEL MOSFET 文件：61.49 Kbytes Page：3 Pages | KIA 可易亚半导体 | | ||
N-Channel 30-V (D-S) MOSFET 文件：1.01805 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | |
GFB50N03产品属性
- 类型
描述
- 型号
GFB50N03
- 功能描述
MOSFET N-Channel 30V 50A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
GENERAL |
25+ |
TO263 |
633 |
原装正品,假一罚十! |
|||
GS |
24+ |
NA/ |
454 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
GS |
23+ |
TO263 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
GS |
25+ |
TO-263 |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
|||
通用 |
23+ |
TO-263 |
45351 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
GS |
20+ |
TO-263 |
22 |
现货很近!原厂很远!只做原装 |
|||
GS |
23+ |
TO263 |
50000 |
全新原装正品现货,支持订货 |
|||
GS |
24+ |
TO-263 |
220110 |
||||
GENERAL SEMICONDUCTOR |
2023+ |
SMD |
1069 |
安罗世纪电子只做原装正品货 |
|||
GS |
2023+ |
TO-263 |
50000 |
原装现货 |
GFB50N03规格书下载地址
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2019-4-16
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