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GES6017晶体管资料
GES6017别名：GES6017三极管、GES6017晶体管、GES6017晶体三极管
GES6017生产厂家：
GES6017制作材料：Si-N/P
GES6017性质：通用型 （Uni）_低噪放大 （ra）
GES6017封装形式：直插封装
GES6017极限工作电压：70V
GES6017最大电流允许值：0.8A
GES6017最大工作频率：<1MHZ或未知
GES6017引脚数：3
GES6017最大耗散功率：0.5W
GES6017放大倍数：β>250
GES6017图片代号：A-20
GES6017vtest：70
GES6017htest：999900
- GES6017atest：0.8
GES6017wtest：0.5
GES6017代换 GES6017用什么型号代替：2N6010,2N6011,2N6012,2N6013,2N6014,2N6015,2N6016,2N6017,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Small Signal Transistors 文件：54.29 Kbytes Page：1 Pages | CENTRAL |   | ||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TMby significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionall | ADPOW | | ||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7® MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alon | ADPOW | | ||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7® FREDFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alo | ADPOW | | ||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7® MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alon | ADPOW | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 文件：60.52 Kbytes Page：4 Pages | ADPOW | |
GES6017产品属性
- 类型
描述
- 功能描述：
TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IBM |
26+ |
BGA |
8000 |
只有原装 |
|||
IBM |
26+ |
BGA |
99680 |
只做原装,欢迎来电资询 |
|||
26+ |
N/A |
73000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
IBM |
25+ |
BGA |
20000 |
原装 |
|||
CNNPCHIP/新晶微 |
25+ |
90000 |
全新原装现货 |
||||
Bychip/百域芯 |
21+ |
DFN0603 |
30000 |
优势供应 品质保障 可开13点发票 |
|||
高特 |
21+ |
DFN1006 |
185 |
只做原装鄙视假货15118075546 |
|||
PANDUIT CORP |
5 |
||||||
Bychip/百域芯 |
25+ |
DFN0603 |
20000 |
原装 |
|||
IBM |
23+ |
BGA |
98900 |
原厂原装正品现货!! |
GES6017规格书下载地址
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DdatasheetPDF页码索引
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