P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The GE6679 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications and suited for low voltage applications such as

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The GE6679 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications and suited for low voltage applications such as

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP6679GJ) is available for low-profile applications. ▼ Lower On-resistance ▼ Simple Driv

P-Channel 30-V (D-S) MOSFET

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P-Channel 30-V (D-S) MOSFET

文件：991.33 Kbytes Page：9 Pages

P-Channel 30-V (D-S) MOSFET

文件：991.29 Kbytes Page：9 Pages

P-Channel 30 V (D-S) MOSFET

文件：1.02315 Mbytes Page：8 Pages