型号 功能描述 生产厂家 企业 LOGO 操作
GE60L02

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The GE60L02 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The through-hole version (TO-220) is available for low-profile applications and suited for low voltage applications such as DC/DC converte

GTM

勤益投资控股

GE60L02

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件:257.5 Kbytes Page:5 Pages

ETL

亚历电子

GE60L02

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

ETL

亚历电子

Low Gate Charge Simple Drive Requirement

Description The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP60L02GJ) is available for low-profile applications. ▼ Low Gate Charge ▼ Simple Driv

A-POWER

富鼎先进电子

N-Channel 30-V (D-S) MOSFET

文件:959.93 Kbytes Page:8 Pages

VBSEMI

微碧半导体

N-Channel 30-V (D-S) MOSFET

文件:1.01797 Mbytes Page:8 Pages

VBSEMI

微碧半导体

N-Channel 30-V (D-S) MOSFET

文件:959.92 Kbytes Page:8 Pages

VBSEMI

微碧半导体

N-Channel 30-V (D-S) MOSFET

文件:1.01491 Mbytes Page:8 Pages

VBSEMI

微碧半导体

GE60L02产品属性

  • 类型

    描述

  • 型号

    GE60L02

  • 制造商

    GTM

  • 制造商全称

    GTM

  • 功能描述

    N-CHANNEL ENHANCEMENT MODE POWER MOSFET

更新时间:2026-3-2 13:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
O2MICRO
1653+
SOT-23-6
8213
上传都是百分之百进口原装现货
CHIPOWER
24+
SOT23-5
18560
假一赔十全新原装现货特价供应工厂客户可放款
GEMOS
24+
SOT-23-6
9600
原装现货,优势供应,支持实单!
N/A
23+
DIP
9000
原厂授权一级代理,专业海外优势订货,价格优势、品种
GE
专业铁帽
TO-3
67500
铁帽原装主营-可开原型号增税票
CHIPOWER
2026+
SOT23-5
2900
原装正品,假一罚十!
IR
23+
DIP4
8000
只做原装现货
GTM
23+
TO-220-3
50000
全新原装正品现货,支持订货
CHIPOWER
25+23+
SOT23-5
29388
绝对原装正品现货,全新深圳原装进口现货
GEI
24+
DIP
233

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