位置:首页 > IC中文资料第5569页 > GE60L02

型号 功能描述 生产厂家 企业 LOGO 操作
GE60L02

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The GE60L02 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The through-hole version (TO-220) is available for low-profile applications and suited for low voltage applications such as DC/DC converte

GTM

勤益投资控股

GE60L02

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件:257.5 Kbytes Page:5 Pages

ETL

亚历电子

GE60L02

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

ETL

亚历电子

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercial-industrial surface mount applications and suited f

A-POWER

富鼎先进电子

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited fo

A-POWER

富鼎先进电子

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件:242.7 Kbytes Page:5 Pages

GTM

勤益投资控股

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件:243.86 Kbytes Page:5 Pages

GTM

勤益投资控股

GE60L02产品属性

  • 类型

    描述

  • 型号

    GE60L02

  • 制造商

    GTM

  • 制造商全称

    GTM

  • 功能描述

    N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GE60L02数据表相关新闻