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GD50

Plug-in sockets and accessories

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RELPOL

GD50

Microwave SLCs ULTRA MAXI Series

文件:105.53 Kbytes Page:1 Pages

AVX

GD50

Microwave SLCs

文件:107.28 Kbytes Page:1 Pages

AVX

GD50

包装:散装 描述:RELAY SOCKET DR FORPCB RM84RM85R 继电器 继电器插座、插槽

ALTECH

GD50

包装:散装 描述:RELAY SOCKET DR FORPCB RM84RM85R 继电器 继电器插座、插槽

ALTECH

GD50

继电器插座及配件

ALTECH

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Description The GD500SD is designed for low power rectification and high reliability.

GTM

勤益投资控股

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Description The GD501SD is designed for low power rectification and high reliability.

GTM

勤益投资控股

650V/50A 6 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with pos

STARPOWER

斯达半导体

1200V/50A 6 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1200V/50A 6 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1200V/50A 6 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  8μs short circuit capability  VCE(sat) with pos

STARPOWER

斯达半导体

1200V/50A 6 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  8μs short circuit capability  VCE(sat) with pos

STARPOWER

斯达半导体

1200V/50A 6 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  short circuit capability  VCE(sat) with positiv

STARPOWER

斯达半导体

1200V/50A 6 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  short circuit capability  VCE(sat) with positiv

STARPOWER

斯达半导体

1200V/50A 6 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

650V/50A 6 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with pos

STARPOWER

斯达半导体

650V/50A 6 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with pos

STARPOWER

斯达半导体

1200V/50A 6 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1200V/50A 2 in one-package

General Description STARPOWER IGBT Power Module provides ultra switching speed as well as short circuit ruggedness. They are designed for the applications such as electronic welder and inductive heating. Features  NPT IGBT technology  10μs short circuit capability  Low switching losses

STARPOWER

斯达半导体

1700V/50A 2 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

650V/50A 2 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with pos

STARPOWER

斯达半导体

1200V 50A 2 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

650V/50A in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as 3-level-application. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with positive

STARPOWER

斯达半导体

1200V/50A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  8μs short circuit capability  VCE(sat) with pos

STARPOWER

斯达半导体

1200V/50A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1700V/50A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

650V/50A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with pos

STARPOWER

斯达半导体

1200V/50A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1200V/50A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1200V/50A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1200V/50A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1200V/50A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1200V/50A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  8μs short circuit capability  VCE(sat) with pos

STARPOWER

斯达半导体

650V/50A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with pos

STARPOWER

斯达半导体

650V/50A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with pos

STARPOWER

斯达半导体

650V/50A in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as 3-level-application. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with positive

STARPOWER

斯达半导体

IGBT模块

STARPOWER

斯达半导体

The GD500SD is designed for low power rectification and high reliability.

文件:145.02 Kbytes Page:2 Pages

ETL

亚历电子

SURFACE MOUNT SCHOTTKY BARRIER DIODE

GTM

勤益投资控股

The GD501SD is designed for low power rectification and high reliability.

文件:144.79 Kbytes Page:2 Pages

ETL

亚历电子

1200V 50A SiC Schottky MPS??Diode

文件:300.75 Kbytes Page:6 Pages

GENESIC

GD50产品属性

  • 类型

    描述

  • 位数:

    单位

  • 电流:

    10mA

  • 8字高度(in):

    0.50

  • 外形尺寸(mm):

    12.60*19.00*8.00

更新时间:2026-5-24 22:17:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
GeneSiC Semiconductor
24+
DO/TO
986
碳化硅二极管原厂正品全系列现货
GS
25+23+
DIP-16
10103
绝对原装正品全新进口深圳现货
STARPOWER
23+
MODULE
10000
原装优质现货订货渠道商
斯达
21+
IGBT
20
21+
STAR
2406+
IGBT
11260
诚信经营!进口原装!量大价优!
GS
22+
DIP-16
5000
进口原装!现货库存
GS
24+
DIP-16
9600
原装现货,优势供应,支持实单!
STARPOW
18+
IGBT
85600
保证进口原装可开17%增值税发票
STARPOWER
专业模块
MODULE
8513
模块原装主营-可开原型号增税票
STARPOWER
23+
模块
42541
##公司主营品牌长期供应100%原装现货可含税提供技术

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