位置:首页 > IC中文资料第1243页 > GD50
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
GD50 | 包装:散装 描述:RELAY SOCKET DR FORPCB RM84RM85R 继电器 继电器插座、插槽 | ALTECH | ||
GD50 | 包装:散装 描述:RELAY SOCKET DR FORPCB RM84RM85R 继电器 继电器插座、插槽 | ALTECH | ||
GD50 | Microwave SLCs ULTRA MAXI Series 文件:105.53 Kbytes Page:1 Pages | AVX | ||
GD50 | Microwave SLCs 文件:107.28 Kbytes Page:1 Pages | AVX | ||
GD50 | Plug-in sockets and accessories 文件:11.04653 Mbytes Page:20 Pages | Relpol | ||
SURFACE MOUNT SCHOTTKY BARRIER DIODE Description The GD500SD is designed for low power rectification and high reliability. | GTM 勤益投资控股 | |||
SURFACE MOUNT SCHOTTKY BARRIER DIODE Description The GD501SD is designed for low power rectification and high reliability. | GTM 勤益投资控股 | |||
650V/50A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 6μs short circuit capability VCE(sat) with pos | STARPOWER 斯达半导体 | |||
1200V/50A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with po | STARPOWER 斯达半导体 | |||
1200V/50A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with po | STARPOWER 斯达半导体 | |||
1200V/50A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 8μs short circuit capability VCE(sat) with pos | STARPOWER 斯达半导体 | |||
1200V/50A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 8μs short circuit capability VCE(sat) with pos | STARPOWER 斯达半导体 | |||
1200V/50A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology short circuit capability VCE(sat) with positiv | STARPOWER 斯达半导体 | |||
1200V/50A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology short circuit capability VCE(sat) with positiv | STARPOWER 斯达半导体 | |||
1200V/50A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with po | STARPOWER 斯达半导体 | |||
650V/50A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 6μs short circuit capability VCE(sat) with pos | STARPOWER 斯达半导体 | |||
650V/50A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 6μs short circuit capability VCE(sat) with pos | STARPOWER 斯达半导体 | |||
1200V/50A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with po | STARPOWER 斯达半导体 | |||
1200V/50A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra switching speed as well as short circuit ruggedness. They are designed for the applications such as electronic welder and inductive heating. Features NPT IGBT technology 10μs short circuit capability Low switching losses | STARPOWER 斯达半导体 | |||
1700V/50A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with po | STARPOWER 斯达半导体 | |||
650V/50A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 6μs short circuit capability VCE(sat) with pos | STARPOWER 斯达半导体 | |||
1200V 50A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with po | STARPOWER 斯达半导体 | |||
650V/50A in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as 3-level-application. Features Low VCE(sat) Trench IGBT technology 6μs short circuit capability VCE(sat) with positive | STARPOWER 斯达半导体 | |||
1200V/50A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 8μs short circuit capability VCE(sat) with pos | STARPOWER 斯达半导体 | |||
1200V/50A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with po | STARPOWER 斯达半导体 | |||
1700V/50A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with po | STARPOWER 斯达半导体 | |||
650V/50A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 6μs short circuit capability VCE(sat) with pos | STARPOWER 斯达半导体 | |||
1200V/50A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with po | STARPOWER 斯达半导体 | |||
1200V/50A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with po | STARPOWER 斯达半导体 | |||
1200V/50A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with po | STARPOWER 斯达半导体 | |||
1200V/50A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with po | STARPOWER 斯达半导体 | |||
1200V/50A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with po | STARPOWER 斯达半导体 | |||
1200V/50A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 8μs short circuit capability VCE(sat) with pos | STARPOWER 斯达半导体 | |||
650V/50A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 6μs short circuit capability VCE(sat) with pos | STARPOWER 斯达半导体 | |||
650V/50A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 6μs short circuit capability VCE(sat) with pos | STARPOWER 斯达半导体 | |||
650V/50A in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as 3-level-application. Features Low VCE(sat) Trench IGBT technology 6μs short circuit capability VCE(sat) with positive | STARPOWER 斯达半导体 | |||
IGBT模块 | STARPOWER 斯达半导体 | |||
The GD500SD is designed for low power rectification and high reliability. 文件:145.02 Kbytes Page:2 Pages | ETL 亚历电子 | |||
SURFACE MOUNT SCHOTTKY BARRIER DIODE | GTM 勤益投资控股 | |||
The GD501SD is designed for low power rectification and high reliability. 文件:144.79 Kbytes Page:2 Pages | ETL 亚历电子 | |||
直插数码管 | ETC 知名厂家 | ETC | ||
1200V 50A SiC Schottky MPS??Diode 文件:300.75 Kbytes Page:6 Pages | GENESIC |
GD50产品属性
- 类型
描述
- 型号
GD50
- 制造商
ALTECH CORP
- 功能描述
Socket; FitsRM84, RM85 For PCB;
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
STAR |
2406+ |
IGBT |
11260 |
诚信经营!进口原装!量大价优! |
|||
STARPOWER |
23+ |
标准封装 |
5000 |
原厂授权一级代理 IGBT模块 可控硅 晶闸管 熔断器质保 |
|||
恩XP |
23+ |
SMD |
50000 |
全新原装正品现货,支持订货 |
|||
ST |
2511 |
IGBT |
16900 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
STARPOWER |
24+ |
MODULE |
1000 |
全新原装现货 |
|||
ST |
25+ |
IGBT |
16900 |
原装,请咨询 |
|||
GS |
24+ |
DIP-16 |
9600 |
原装现货,优势供应,支持实单! |
|||
STARPOWER |
23+ |
36200 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
24+ |
N/A |
54000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
STARPOWER |
22+ |
N/A |
5500 |
斯达半导全系列在售,支持终端生产 |
GD50规格书下载地址
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