| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
GD50 | Plug-in sockets and accessories 文件:11.04653 Mbytes Page:20 Pages | RELPOL | ||
GD50 | Microwave SLCs ULTRA MAXI Series 文件:105.53 Kbytes Page:1 Pages | AVX | ||
GD50 | Microwave SLCs 文件:107.28 Kbytes Page:1 Pages | AVX | ||
GD50 | 包装:散装 描述:RELAY SOCKET DR FORPCB RM84RM85R 继电器 继电器插座、插槽 | ALTECH | ||
GD50 | 包装:散装 描述:RELAY SOCKET DR FORPCB RM84RM85R 继电器 继电器插座、插槽 | ALTECH | ||
GD50 | 继电器插座及配件 | ALTECH | ||
SURFACE MOUNT SCHOTTKY BARRIER DIODE Description The GD500SD is designed for low power rectification and high reliability. | GTM 勤益投资控股 | |||
SURFACE MOUNT SCHOTTKY BARRIER DIODE Description The GD501SD is designed for low power rectification and high reliability. | GTM 勤益投资控股 | |||
650V/50A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 6μs short circuit capability VCE(sat) with pos | STARPOWER 斯达半导体 | |||
1200V/50A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with po | STARPOWER 斯达半导体 | |||
1200V/50A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with po | STARPOWER 斯达半导体 | |||
1200V/50A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 8μs short circuit capability VCE(sat) with pos | STARPOWER 斯达半导体 | |||
1200V/50A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 8μs short circuit capability VCE(sat) with pos | STARPOWER 斯达半导体 | |||
1200V/50A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology short circuit capability VCE(sat) with positiv | STARPOWER 斯达半导体 | |||
1200V/50A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology short circuit capability VCE(sat) with positiv | STARPOWER 斯达半导体 | |||
1200V/50A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with po | STARPOWER 斯达半导体 | |||
650V/50A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 6μs short circuit capability VCE(sat) with pos | STARPOWER 斯达半导体 | |||
650V/50A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 6μs short circuit capability VCE(sat) with pos | STARPOWER 斯达半导体 | |||
1200V/50A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with po | STARPOWER 斯达半导体 | |||
1200V/50A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra switching speed as well as short circuit ruggedness. They are designed for the applications such as electronic welder and inductive heating. Features NPT IGBT technology 10μs short circuit capability Low switching losses | STARPOWER 斯达半导体 | |||
1700V/50A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with po | STARPOWER 斯达半导体 | |||
650V/50A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 6μs short circuit capability VCE(sat) with pos | STARPOWER 斯达半导体 | |||
1200V 50A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with po | STARPOWER 斯达半导体 | |||
650V/50A in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as 3-level-application. Features Low VCE(sat) Trench IGBT technology 6μs short circuit capability VCE(sat) with positive | STARPOWER 斯达半导体 | |||
1200V/50A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 8μs short circuit capability VCE(sat) with pos | STARPOWER 斯达半导体 | |||
1200V/50A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with po | STARPOWER 斯达半导体 | |||
1700V/50A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with po | STARPOWER 斯达半导体 | |||
650V/50A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 6μs short circuit capability VCE(sat) with pos | STARPOWER 斯达半导体 | |||
1200V/50A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with po | STARPOWER 斯达半导体 | |||
1200V/50A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with po | STARPOWER 斯达半导体 | |||
1200V/50A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with po | STARPOWER 斯达半导体 | |||
1200V/50A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with po | STARPOWER 斯达半导体 | |||
1200V/50A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with po | STARPOWER 斯达半导体 | |||
1200V/50A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 8μs short circuit capability VCE(sat) with pos | STARPOWER 斯达半导体 | |||
650V/50A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 6μs short circuit capability VCE(sat) with pos | STARPOWER 斯达半导体 | |||
650V/50A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 6μs short circuit capability VCE(sat) with pos | STARPOWER 斯达半导体 | |||
650V/50A in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as 3-level-application. Features Low VCE(sat) Trench IGBT technology 6μs short circuit capability VCE(sat) with positive | STARPOWER 斯达半导体 | |||
IGBT模块 | STARPOWER 斯达半导体 | |||
The GD500SD is designed for low power rectification and high reliability. 文件:145.02 Kbytes Page:2 Pages | ETL 亚历电子 | |||
SURFACE MOUNT SCHOTTKY BARRIER DIODE | GTM 勤益投资控股 | |||
The GD501SD is designed for low power rectification and high reliability. 文件:144.79 Kbytes Page:2 Pages | ETL 亚历电子 | |||
1200V 50A SiC Schottky MPS??Diode 文件:300.75 Kbytes Page:6 Pages | GENESIC |
GD50产品属性
- 类型
描述
- 位数:
单位
- 电流:
10mA
- 8字高度(in):
0.50
- 外形尺寸(mm):
12.60*19.00*8.00
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor |
24+ |
DO/TO |
986 |
碳化硅二极管原厂正品全系列现货 |
|||
GS |
25+23+ |
DIP-16 |
10103 |
绝对原装正品全新进口深圳现货 |
|||
STARPOWER |
23+ |
MODULE |
10000 |
原装优质现货订货渠道商 |
|||
斯达 |
21+ |
IGBT |
20 |
21+ |
|||
STAR |
2406+ |
IGBT |
11260 |
诚信经营!进口原装!量大价优! |
|||
GS |
22+ |
DIP-16 |
5000 |
进口原装!现货库存 |
|||
GS |
24+ |
DIP-16 |
9600 |
原装现货,优势供应,支持实单! |
|||
STARPOW |
18+ |
IGBT |
85600 |
保证进口原装可开17%增值税发票 |
|||
STARPOWER |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
|||
STARPOWER |
23+ |
模块 |
42541 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
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GD50规格书下载地址
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2020-7-31
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