| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=300A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=5.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRITION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  |   | |
PolarPowerMOSFETHiPerFET Polar™HiPerFET™PowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •InternationalStandardPackage •miniBLOC,withAluminiumNitrideIsolation •LowRDS(on)andQG •AvalancheRated •LowPackageInductance •FastIntrinsicRectifier Advantages •H | IXYS IXYS Corporation |  | | |
PolarPowerMOSFETHiPerFET 文件：134.14 Kbytes Page：4 Pages | IXYS IXYS Corporation | | | |
PowerMOSFET 文件：140.7 Kbytes Page：5 Pages | IXYS IXYS Corporation | | | |
PowerMOSFET 文件：128.28 Kbytes Page：5 Pages | IXYS IXYS Corporation | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS |
24+ |
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SOT227 |
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MOSFETN-CHSOT-227 |
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IXYS |
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57 |
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SOT2274 miniBLOC |
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MODULE |
159 |
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5500 |
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IXYS |
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MODULE |
1000 |
全新原装现货 |
|||
IXYS |
14+ |
TO-227 |
57 |
普通 |
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2019-11-4
DdatasheetPDF页码索引
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