位置:首页 > IC中文资料第5582页 > GD30
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
GD30 | Microwave SLCs 文件:107.28 Kbytes Page:1 Pages | AVX | ||
GD30 | Microwave SLCs ULTRA MAXI Series 文件:105.53 Kbytes Page:1 Pages | AVX | ||
1200V/300A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with po | STARPOWER 斯达半导体 | |||
1200V/300A chopper in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with po | STARPOWER 斯达半导体 | |||
1200V/300A chopper in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with po | STARPOWER 斯达半导体 | |||
1200V/300A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 6μs short circuit capability VCE(sat) with pos | STARPOWER 斯达半导体 | |||
650V/300A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 6μs short circuit capability VCE(sat) with pos | STARPOWER 斯达半导体 | |||
1200V/300A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as electronic welder and inductive heating. Features Low VCE(sat) Trench IGBT technology 10μs short circuit capability VC | STARPOWER 斯达半导体 | |||
1200V/300A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra switching speed as well as short circuit ruggedness. They are designed for the applications such as electronic welder and inductive heating. Features NPT IGBT technology 10μs short circuit capability Low switching losses | STARPOWER 斯达半导体 | |||
1200V/300A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features NPT IGBT technology 10μs short circuit capability Low switching losses Rugged w | STARPOWER 斯达半导体 | |||
1700V/300A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with po | STARPOWER 斯达半导体 | |||
1700V/300A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with po | STARPOWER 斯达半导体 | |||
650V/300A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 6μs short circuit capability VCE(sat) with pos | STARPOWER 斯达半导体 | |||
650V/300A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as inverters and UPS. Features Low VCE(sat) Trench IGBT technology VCE(sat) with positive temperature coefficient 6μs sho | STARPOWER 斯达半导体 | |||
650V/300A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 6μs short circuit capability VCE(sat) with pos | STARPOWER 斯达半导体 | |||
650V/300A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 6μs short circuit capability VCE(sat) with pos | STARPOWER 斯达半导体 | |||
1200V/300A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with po | STARPOWER 斯达半导体 | |||
1200V/300A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverter and UPS. Features Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with pos | STARPOWER 斯达半导体 | |||
1200V/300A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with po | STARPOWER 斯达半导体 | |||
650V/300A 3-level in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as 3-level-applications. Features Low VCE(sat) trench IGBT technology 6μs short circuit capability VCE(sat) with positive | STARPOWER 斯达半导体 | |||
650V/300A in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as 3-level-applications. Features Low VCE(sat) trench IGBT technology 6μs short circuit capability VCE(sat) with positive | STARPOWER 斯达半导体 | |||
1200V/300A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as 3-level-applications. Features Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with positiv | STARPOWER 斯达半导体 | |||
1200V/300A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as 3-level-applications. Features Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with positiv | STARPOWER 斯达半导体 | |||
1200V/300A 1 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with po | STARPOWER 斯达半导体 | |||
650V/300A in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as 3-level-applications. Features Low VCE(sat) trench IGBT technology 6μs short circuit capability VCE(sat) with positive | STARPOWER 斯达半导体 | |||
650V/30A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 6μs short circuit capability VCE(sat) with pos | STARPOWER 斯达半导体 | |||
650V/30A in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as 3-level-application. Features Low VCE(sat) Trench IGBT technology 6μs short circuit capability VCE(sat) with positive | STARPOWER 斯达半导体 | |||
650V/30A in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as 3-level-application. Features Low VCE(sat) Trench IGBT technology 6μs short circuit capability VCE(sat) with positive | STARPOWER 斯达半导体 | |||
SIC Schottky Diode DESCRIPTION · High surge current capability · Fast Switching · Low Thermal Resistance APPLICATIONS · Solar inverter · Power Factor Correction (PFC) · Switch mode power supply | ISC 无锡固电 | |||
650V/30A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 6μs short circuit capability VCE(sat) with pos | STARPOWER 斯达半导体 | |||
650V/30A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 6μs short circuit capability VCE(sat) with pos | STARPOWER 斯达半导体 | |||
650V/30A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 6μs short circuit capability VCE(sat) with pos | STARPOWER 斯达半导体 | |||
650V/30A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 6μs short circuit capability VCE(sat) with pos | STARPOWER 斯达半导体 | |||
650V/30A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 6μs short circuit capability VCE(sat) with pos | STARPOWER 斯达半导体 | |||
650V/30A in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 6μs short circuit capability VCE(sat) with pos | STARPOWER 斯达半导体 | |||
650V/30A in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 6μs short circuit capability VCE(sat) with pos | STARPOWER 斯达半导体 | |||
1200V IGBT模块 | STARPOWER 斯达半导体 | |||
1200V IGBT模块 | STARPOWER 斯达半导体 | |||
IGBT模块 | STARPOWER 斯达半导体 | |||
包装:托盘 描述:SPEAKER 223OHM SIDE PORT 100DB 音频设备, 产品 扬声器 | KNOWLES 楼氏电子 | |||
封装/外壳:TO-220-2 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:650V 30A TO-220-2 SIC SCHOTTKY M 分立半导体产品 二极管 - 整流器 - 单 | GENESIC | |||
650V 30A SiC Schottky MPS??Diode 文件:469.02 Kbytes Page:7 Pages | GENESIC | |||
650V 30A SiC Schottky MPS??Diode 文件:530.45 Kbytes Page:7 Pages | GENESIC | |||
1200V 30A SiC Schottky MPS??Diode 文件:304.05 Kbytes Page:6 Pages | GENESIC |
GD30产品属性
- 类型
描述
- 型号
GD30
- 制造商
AVX
- 制造商全称
AVX Corporation
- 功能描述
Microwave SLCs ULTRA MAXI Series
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
STAR |
2406+ |
IGBT |
11260 |
诚信经营!进口原装!量大价优! |
|||
STARPOWER |
23+ |
标准封装 |
5000 |
原厂授权一级代理 IGBT模块 可控硅 晶闸管 熔断器质保 |
|||
POWERSEMI |
24+ |
IGBT |
270 |
一般纳税资质,只做原装正品。 |
|||
ST |
2511 |
原厂原封 |
16900 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
STARPOWER |
24+ |
MODULE |
1000 |
全新原装现货 |
|||
GD |
24+ |
32340 |
只做原装 有挂有货 假一赔十 |
||||
ST |
25+ |
原厂原封 |
16900 |
原装,请咨询 |
|||
STARPOWER |
23+ |
MODULE |
28000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
24+ |
N/A |
52000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
STARPOWER |
2318+ |
原厂原包 |
6850 |
十年专业专注 优势渠道商正品保证 |
GD30规格书下载地址
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