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GD150晶体管资料

  • GD150别名:GD150三极管、GD150晶体管、GD150晶体三极管

  • GD150生产厂家:德国VEB联合企业

  • GD150制作材料:Ge-PNP

  • GD150性质:低频或音频放大 (LF)_功率放大 (L)

  • GD150封装形式:直插封装

  • GD150极限工作电压:20V

  • GD150最大电流允许值:3A

  • GD150最大工作频率:<1MHZ或未知

  • GD150引脚数:2

  • GD150最大耗散功率:5.3W

  • GD150放大倍数

  • GD150图片代号:E-44

  • GD150vtest:20

  • GD150htest:999900

  • GD150atest:3

  • GD150wtest:5.3

  • GD150代换 GD150用什么型号代替:AD162,AD262,3AD50A,

型号 功能描述 生产厂家 企业 LOGO 操作

1200V/150A 2 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverter and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with pos

STARPOWER

斯达半导体

1700V IGBT模块

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.\n\nThey are designed for the applications such as general inverters and UPS. 额定电压: 1700V\n额定电流: 150A\n电路结构: Chopper\n芯片系列: L Low Loss and Fast IGBT;

STARPOWER

斯达半导体

1200V IGBT模块

额定电压: 1200V\n额定电流: 150A\n电路结构: CL= Chopper Diode Low Side\n芯片系列: Y=Advanced Trench FS IGBT, Low Loss;

STARPOWER

斯达半导体

1200V/150A chopper in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1200V/150A chopper in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1700V IGBT模块

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.\n\nThey are designed for the applications such as general inverters and UPS. 额定电压: 1700V\n额定电流: 150A\n电路结构: Chopper\n芯片系列: L Low Loss and Fast IGBT;

STARPOWER

斯达半导体

650V/150A chopper in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with pos

STARPOWER

斯达半导体

1200V/150A chopper in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1200V/150A chopper in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1200V/150A 6 in one-packag

General Description STARPOWER IGBT Power Module provides ultrafast switching speed as well as short circuit ruggedness. It’s designed for the applications such as welding machine and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with positive

STARPOWER

斯达半导体

650V/150A 6 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with pos

STARPOWER

斯达半导体

1200V/150A 6 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1200V/150A 6 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1200V/150A 6 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1200V/150A 2 in one-package

General Description STARPOWER IGBT Power Module provides ultra switching speed as well as short circuit ruggedness. They are designed for the applications such as electronic welder and inductive heating. Features  NPT IGBT technology  10μs short circuit capability  Low switching losses

STARPOWER

斯达半导体

1200V/150A 2 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  NPT IGBT technology  10μs short circuit capability  Low switching losses  Rugged w

STARPOWER

斯达半导体

1200V/150A 2 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1700V/150A 2 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

650V/150A 2 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with pos

STARPOWER

斯达半导体

1200V/150A 2 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1200V/150A 2 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1200V/150A 2 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  Low switching loss  10μs short circuit capabili

STARPOWER

斯达半导体

1200V/150A 2 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  Low switching loss  10μs short circuit capabili

STARPOWER

斯达半导体

1200V/150A 4 in one-package

General Description STARPOWER IGBT Power Module provides ultrafast switching speed as well as short circuit ruggedness. It’s designed for the applications such as electronic welder and inductive heating. Features  NPT IGBT technology  10μs short circuit capability  Low switching losses

STARPOWER

斯达半导体

650V/150A 3-level in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as 3-level-application. Features  Low VCE(sat) Trench IGBT technology  Low switching loss  6μs short circuit capability  V

STARPOWER

斯达半导体

1200V/150A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  8μs short circuit capability  VCE(sat) with pos

STARPOWER

斯达半导体

650V/150A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with pos

STARPOWER

斯达半导体

1200V/150A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1200V/150A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

HIGH POWER SWITCHING USE INSULATED TYPE

HIGH POWER SWITCHING USE INSULATED TYPE • IC Collector current ........................ 150A • VCEX Collector-emitter voltage ........... 600V • hFE DC current gain............................... 75 • Insulated Type • UL Recognized Yellow Card No. E80276 (N)

MITSUBISHI

三菱电机

HIGH POWER SWITCHING USE INSULATED TYPE

HIGH POWER SWITCHING USE INSULATED TYPE • IC Collector current ........................ 150A • VCEX Collector-emitter voltage ........... 600V • hFE DC current gain............................. 750 • Insulated Type • UL Recognized Yellow Card No. E80276 (N)

MITSUBISHI

三菱电机

HIGH POWER SWITCHING USE INSULATED TYPE

HIGH POWER SWITCHING USE INSULATED TYPE • IC Collector current ........................ 150A • VCEX Collector-emitter voltage ........... 600V • hFE DC current gain............................... 75 • Insulated Type • UL Recognized Yellow Card No. E80276 (N)

MITSUBISHI

三菱电机

HIGH POWER SWITCHING USE INSULATED TYPE

HIGH POWER SWITCHING USE INSULATED TYPE • IC Collector current ........................ 150A • VCEX Collector-emitter voltage ........... 600V • hFE DC current gain............................. 750 • Insulated Type • UL Recognized Yellow Card No. E80276 (N)

MITSUBISHI

三菱电机

HIGH POWER GENERAL USE INSULATED TYPE

HIGH POWER GENERAL USE INSULATED TYPE • IF(AV) Average forward current .......... 150A • VRRM Repetitive peak reverse voltage .............. 400/800/1200/1600V • DOUBLE ARMS • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controllers, DC

MITSUBISHI

三菱电机

GD150产品属性

  • 类型

    描述

  • 类型:

    PIN

  • IC(A):

    150

  • Vf(V):

    2.0

  • 应用领域:

    变频、光伏

更新时间:2026-5-14 13:51:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
STARPOWER
24+
MODULE
350
只做原装,欢迎询价,量大价优
STARPOWER
26+
MODULE
43600
全新原装现货,假一赔十
STARPOWER
19+
MODULE
350
原装现货询价发QQ微信
STARPOWER
23+
标准封装
5000
原厂授权一级代理 IGBT模块 可控硅 晶闸管 熔断器质保
STARPOWER
23+
MODULE
28000
原厂授权一级代理,专业海外优势订货,价格优势、品种
26+
N/A
70000
一级代理-主营优势-实惠价格-不悔选择
STARPOWER
25+23+
MODULE
35058
绝对原装正品全新进口深圳现货
Starpower(嘉兴斯达)
2447
-
31500
1个/盒一级代理专营品牌!原装正品,优势现货,长期排
STARPOWER
23+
MODULE
7300
专注配单,只做原装进口现货
STARPOWER
24+
MODULE
1000
全新原装现货

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