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GC9价格
参考价格：￥0.0000
型号：GC96FM 品牌：Misc 备注：这里有GC9多少钱，2024年最近7天走势，今日出价，今日竞价，GC9批发/采购报价，GC9行情走势销售排行榜，GC9报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
PASSIVE DEVICES - Spiral Bias Elements DESCRIPTION TheGC9000seriesofspiralbiaselementchipsarephotolithographicallyfabricatedplanarspiralconductorssupportedonahighqualityfusedquartzsubstrate.ThesedevicesaredesignedtomeethybridmicrowavecircuitrequirementsforDCpowerinjectionthroughKu(orJ)band.The | MicrosemiMicrosemi Corporation 美高森美美高森美公司 |  |   | |
PASSIVE DEVICES - Spiral Bias Elements DESCRIPTION TheGC9000seriesofspiralbiaselementchipsarephotolithographicallyfabricatedplanarspiralconductorssupportedonahighqualityfusedquartzsubstrate.ThesedevicesaredesignedtomeethybridmicrowavecircuitrequirementsforDCpowerinjectionthroughKu(orJ)band.The | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
PASSIVE DEVICES - Spiral Bias Elements DESCRIPTION TheGC9000seriesofspiralbiaselementchipsarephotolithographicallyfabricatedplanarspiralconductorssupportedonahighqualityfusedquartzsubstrate.ThesedevicesaredesignedtomeethybridmicrowavecircuitrequirementsforDCpowerinjectionthroughKu(orJ)band.The | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
PASSIVE DEVICES - Spiral Bias Elements DESCRIPTION TheGC9000seriesofspiralbiaselementchipsarephotolithographicallyfabricatedplanarspiralconductorssupportedonahighqualityfusedquartzsubstrate.ThesedevicesaredesignedtomeethybridmicrowavecircuitrequirementsforDCpowerinjectionthroughKu(orJ)band.The | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
PASSIVE DEVICES - Spiral Bias Elements DESCRIPTION TheGC9000seriesofspiralbiaselementchipsarephotolithographicallyfabricatedplanarspiralconductorssupportedonahighqualityfusedquartzsubstrate.ThesedevicesaredesignedtomeethybridmicrowavecircuitrequirementsforDCpowerinjectionthroughKu(orJ)band.The | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
PASSIVE DEVICES - Spiral Bias Elements DESCRIPTION TheGC9000seriesofspiralbiaselementchipsarephotolithographicallyfabricatedplanarspiralconductorssupportedonahighqualityfusedquartzsubstrate.ThesedevicesaredesignedtomeethybridmicrowavecircuitrequirementsforDCpowerinjectionthroughKu(orJ)band.The | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
PASSIVE DEVICES - Spiral Bias Elements DESCRIPTION TheGC9000seriesofspiralbiaselementchipsarephotolithographicallyfabricatedplanarspiralconductorssupportedonahighqualityfusedquartzsubstrate.ThesedevicesaredesignedtomeethybridmicrowavecircuitrequirementsforDCpowerinjectionthroughKu(orJ)band.The | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
PASSIVE DEVICES - Spiral Bias Elements DESCRIPTION TheGC9000seriesofspiralbiaselementchipsarephotolithographicallyfabricatedplanarspiralconductorssupportedonahighqualityfusedquartzsubstrate.ThesedevicesaredesignedtomeethybridmicrowavecircuitrequirementsforDCpowerinjectionthroughKu(orJ)band.The | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
PASSIVE DEVICES - Spiral Bias Elements DESCRIPTION TheGC9000seriesofspiralbiaselementchipsarephotolithographicallyfabricatedplanarspiralconductorssupportedonahighqualityfusedquartzsubstrate.ThesedevicesaredesignedtomeethybridmicrowavecircuitrequirementsforDCpowerinjectionthroughKu(orJ)band.The | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
PASSIVE DEVICES - Spiral Bias Elements DESCRIPTION TheGC9000seriesofspiralbiaselementchipsarephotolithographicallyfabricatedplanarspiralconductorssupportedonahighqualityfusedquartzsubstrate.ThesedevicesaredesignedtomeethybridmicrowavecircuitrequirementsforDCpowerinjectionthroughKu(orJ)band.The | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
PASSIVE DEVICES - Spiral Bias Elements DESCRIPTION TheGC9000seriesofspiralbiaselementchipsarephotolithographicallyfabricatedplanarspiralconductorssupportedonahighqualityfusedquartzsubstrate.ThesedevicesaredesignedtomeethybridmicrowavecircuitrequirementsforDCpowerinjectionthroughKu(orJ)band.The | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
SCHOTTKY BARRIER DIODES General Purpose TM DESCRIPTION Thisuniquemesaconstruction(GC9700,GC9701,andGC9702)provideshighbreakdownvoltagewithtrueSchottkycharacteristicswithoutresortingtotheuseofadiffusedguardring.TheGC9703andGC9704areplanarschottkydevices.Thestandarddevicesareavailableinglassaxiallea | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
SCHOTTKY BARRIER DIODES General Purpose TM DESCRIPTION Thisuniquemesaconstruction(GC9700,GC9701,andGC9702)provideshighbreakdownvoltagewithtrueSchottkycharacteristicswithoutresortingtotheuseofadiffusedguardring.TheGC9703andGC9704areplanarschottkydevices.Thestandarddevicesareavailableinglassaxiallea | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
SCHOTTKY BARRIER DIODES General Purpose TM DESCRIPTION Thisuniquemesaconstruction(GC9700,GC9701,andGC9702)provideshighbreakdownvoltagewithtrueSchottkycharacteristicswithoutresortingtotheuseofadiffusedguardring.TheGC9703andGC9704areplanarschottkydevices.Thestandarddevicesareavailableinglassaxiallea | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
SCHOTTKY BARRIER DIODES General Purpose TM DESCRIPTION Thisuniquemesaconstruction(GC9700,GC9701,andGC9702)provideshighbreakdownvoltagewithtrueSchottkycharacteristicswithoutresortingtotheuseofadiffusedguardring.TheGC9703andGC9704areplanarschottkydevices.Thestandarddevicesareavailableinglassaxiallea | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
SCHOTTKY BARRIER DIODES General Purpose TM DESCRIPTION Thisuniquemesaconstruction(GC9700,GC9701,andGC9702)provideshighbreakdownvoltagewithtrueSchottkycharacteristicswithoutresortingtotheuseofadiffusedguardring.TheGC9703andGC9704areplanarschottkydevices.Thestandarddevicesareavailableinglassaxiallea | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
Schottky Barrier Diodes TM For Mixers and Detectors DESCRIPTION SchottkyBarrierdevicesarecurrentlyavailableinsinglebeamlead,dual“T”,ringquadandbridgequadconfigurations.Devicesareavailableinmonolithicformforhybridapplicationsaswellasinhermeticornon-hermeticpackages.Monolithicdevicesarerecommendedforhighestfre | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
Schottky Barrier Diodes TM For Mixers and Detectors DESCRIPTION SchottkyBarrierdevicesarecurrentlyavailableinsinglebeamlead,dual“T”,ringquadandbridgequadconfigurations.Devicesareavailableinmonolithicformforhybridapplicationsaswellasinhermeticornon-hermeticpackages.Monolithicdevicesarerecommendedforhighestfre | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
Schottky Barrier Diodes TM For Mixers and Detectors DESCRIPTION SchottkyBarrierdevicesarecurrentlyavailableinsinglebeamlead,dual“T”,ringquadandbridgequadconfigurations.Devicesareavailableinmonolithicformforhybridapplicationsaswellasinhermeticornon-hermeticpackages.Monolithicdevicesarerecommendedforhighestfre | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
Schottky Barrier Diodes TM For Mixers and Detectors DESCRIPTION SchottkyBarrierdevicesarecurrentlyavailableinsinglebeamlead,dual“T”,ringquadandbridgequadconfigurations.Devicesareavailableinmonolithicformforhybridapplicationsaswellasinhermeticornon-hermeticpackages.Monolithicdevicesarerecommendedforhighestfre | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
Schottky Barrier Diodes TM For Mixers and Detectors DESCRIPTION SchottkyBarrierdevicesarecurrentlyavailableinsinglebeamlead,dual“T”,ringquadandbridgequadconfigurations.Devicesareavailableinmonolithicformforhybridapplicationsaswellasinhermeticornon-hermeticpackages.Monolithicdevicesarerecommendedforhighestfre | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
Schottky Barrier Diodes TM For Mixers and Detectors DESCRIPTION SchottkyBarrierdevicesarecurrentlyavailableinsinglebeamlead,dual“T”,ringquadandbridgequadconfigurations.Devicesareavailableinmonolithicformforhybridapplicationsaswellasinhermeticornon-hermeticpackages.Monolithicdevicesarerecommendedforhighestfre | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
Schottky Barrier Diodes TM For Mixers and Detectors DESCRIPTION SchottkyBarrierdevicesarecurrentlyavailableinsinglebeamlead,dual“T”,ringquadandbridgequadconfigurations.Devicesareavailableinmonolithicformforhybridapplicationsaswellasinhermeticornon-hermeticpackages.Monolithicdevicesarerecommendedforhighestfre | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
Schottky Barrier Diodes TM For Mixers and Detectors DESCRIPTION SchottkyBarrierdevicesarecurrentlyavailableinsinglebeamlead,dual“T”,ringquadandbridgequadconfigurations.Devicesareavailableinmonolithicformforhybridapplicationsaswellasinhermeticornon-hermeticpackages.Monolithicdevicesarerecommendedforhighestfre | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
Schottky Barrier Diodes TM For Mixers and Detectors DESCRIPTION SchottkyBarrierdevicesarecurrentlyavailableinsinglebeamlead,dual“T”,ringquadandbridgequadconfigurations.Devicesareavailableinmonolithicformforhybridapplicationsaswellasinhermeticornon-hermeticpackages.Monolithicdevicesarerecommendedforhighestfre | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
Schottky Barrier Diodes TM For Mixers and Detectors DESCRIPTION SchottkyBarrierdevicesarecurrentlyavailableinsinglebeamlead,dual“T”,ringquadandbridgequadconfigurations.Devicesareavailableinmonolithicformforhybridapplicationsaswellasinhermeticornon-hermeticpackages.Monolithicdevicesarerecommendedforhighestfre | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
Schottky Barrier Diodes TM For Mixers and Detectors DESCRIPTION SchottkyBarrierdevicesarecurrentlyavailableinsinglebeamlead,dual“T”,ringquadandbridgequadconfigurations.Devicesareavailableinmonolithicformforhybridapplicationsaswellasinhermeticornon-hermeticpackages.Monolithicdevicesarerecommendedforhighestfre | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
Schottky Barrier Diodes TM For Mixers and Detectors DESCRIPTION SchottkyBarrierdevicesarecurrentlyavailableinsinglebeamlead,dual“T”,ringquadandbridgequadconfigurations.Devicesareavailableinmonolithicformforhybridapplicationsaswellasinhermeticornon-hermeticpackages.Monolithicdevicesarerecommendedforhighestfre | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
Schottky Barrier Diodes TM For Mixers and Detectors DESCRIPTION SchottkyBarrierdevicesarecurrentlyavailableinsinglebeamlead,dual“T”,ringquadandbridgequadconfigurations.Devicesareavailableinmonolithicformforhybridapplicationsaswellasinhermeticornon-hermeticpackages.Monolithicdevicesarerecommendedforhighestfre | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
Schottky Barrier Diodes TM For Mixers and Detectors DESCRIPTION SchottkyBarrierdevicesarecurrentlyavailableinsinglebeamlead,dual“T”,ringquadandbridgequadconfigurations.Devicesareavailableinmonolithicformforhybridapplicationsaswellasinhermeticornon-hermeticpackages.Monolithicdevicesarerecommendedforhighestfre | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
Schottky Barrier Diodes TM For Mixers and Detectors DESCRIPTION SchottkyBarrierdevicesarecurrentlyavailableinsinglebeamlead,dual“T”,ringquadandbridgequadconfigurations.Devicesareavailableinmonolithicformforhybridapplicationsaswellasinhermeticornon-hermeticpackages.Monolithicdevicesarerecommendedforhighestfre | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
Schottky Barrier Diodes TM For Mixers and Detectors DESCRIPTION SchottkyBarrierdevicesarecurrentlyavailableinsinglebeamlead,dual“T”,ringquadandbridgequadconfigurations.Devicesareavailableinmonolithicformforhybridapplicationsaswellasinhermeticornon-hermeticpackages.Monolithicdevicesarerecommendedforhighestfre | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
Schottky Barrier Diodes TM For Mixers and Detectors DESCRIPTION SchottkyBarrierdevicesarecurrentlyavailableinsinglebeamlead,dual“T”,ringquadandbridgequadconfigurations.Devicesareavailableinmonolithicformforhybridapplicationsaswellasinhermeticornon-hermeticpackages.Monolithicdevicesarerecommendedforhighestfre | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
Schottky Barrier Diodes TM For Mixers and Detectors DESCRIPTION SchottkyBarrierdevicesarecurrentlyavailableinsinglebeamlead,dual“T”,ringquadandbridgequadconfigurations.Devicesareavailableinmonolithicformforhybridapplicationsaswellasinhermeticornon-hermeticpackages.Monolithicdevicesarerecommendedforhighestfre | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
Schottky Barrier Diodes TM For Mixers and Detectors DESCRIPTION SchottkyBarrierdevicesarecurrentlyavailableinsinglebeamlead,dual“T”,ringquadandbridgequadconfigurations.Devicesareavailableinmonolithicformforhybridapplicationsaswellasinhermeticornon-hermeticpackages.Monolithicdevicesarerecommendedforhighestfre | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
Schottky Barrier Diodes TM For Mixers and Detectors DESCRIPTION SchottkyBarrierdevicesarecurrentlyavailableinsinglebeamlead,dual“T”,ringquadandbridgequadconfigurations.Devicesareavailableinmonolithicformforhybridapplicationsaswellasinhermeticornon-hermeticpackages.Monolithicdevicesarerecommendedforhighestfre | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
Schottky Barrier Diodes TM Ultra High Drive Monolithic DESCRIPTION Microsemi’sSchottkyBarrierdevicesarecurrentlyavailableintheeightjunctionringquadconfiguration.Devicesareavailableinmonolithicformforhybridapplicationsaswellasinhermeticornon-hermeticpackages.Monolithicdevicesarerecommendedforhighestfrequency,broad | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
Schottky Barrier Diodes TM Ultra High Drive Monolithic DESCRIPTION Microsemi’sSchottkyBarrierdevicesarecurrentlyavailableintheeightjunctionringquadconfiguration.Devicesareavailableinmonolithicformforhybridapplicationsaswellasinhermeticornon-hermeticpackages.Monolithicdevicesarerecommendedforhighestfrequency,broad | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
Schottky Barrier Diodes TM Ultra High Drive Monolithic DESCRIPTION Microsemi’sSchottkyBarrierdevicesarecurrentlyavailableintheeightjunctionringquadconfiguration.Devicesareavailableinmonolithicformforhybridapplicationsaswellasinhermeticornon-hermeticpackages.Monolithicdevicesarerecommendedforhighestfrequency,broad | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
Schottky Barrier Diodes TM Ultra High Drive Monolithic DESCRIPTION Microsemi’sSchottkyBarrierdevicesarecurrentlyavailableintheeightjunctionringquadconfiguration.Devicesareavailableinmonolithicformforhybridapplicationsaswellasinhermeticornon-hermeticpackages.Monolithicdevicesarerecommendedforhighestfrequency,broad | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
Schottky Barrier Diodes TM Ultra High Drive Monolithic DESCRIPTION Microsemi’sSchottkyBarrierdevicesarecurrentlyavailableintheeightjunctionringquadconfiguration.Devicesareavailableinmonolithicformforhybridapplicationsaswellasinhermeticornon-hermeticpackages.Monolithicdevicesarerecommendedforhighestfrequency,broad | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
Schottky Barrier Diodes TM Ultra High Drive Monolithic DESCRIPTION Microsemi’sSchottkyBarrierdevicesarecurrentlyavailableintheeightjunctionringquadconfiguration.Devicesareavailableinmonolithicformforhybridapplicationsaswellasinhermeticornon-hermeticpackages.Monolithicdevicesarerecommendedforhighestfrequency,broad | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
Schottky Barrier Diodes TM Ultra High Drive Monolithic DESCRIPTION Microsemi’sSchottkyBarrierdevicesarecurrentlyavailableintheeightjunctionringquadconfiguration.Devicesareavailableinmonolithicformforhybridapplicationsaswellasinhermeticornon-hermeticpackages.Monolithicdevicesarerecommendedforhighestfrequency,broad | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
Schottky Barrier Diodes TM Ultra High Drive Monolithic DESCRIPTION Microsemi’sSchottkyBarrierdevicesarecurrentlyavailableintheeightjunctionringquadconfiguration.Devicesareavailableinmonolithicformforhybridapplicationsaswellasinhermeticornon-hermeticpackages.Monolithicdevicesarerecommendedforhighestfrequency,broad | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
Schottky Barrier Diodes TM Ultra High Drive Monolithic DESCRIPTION Microsemi’sSchottkyBarrierdevicesarecurrentlyavailableintheeightjunctionringquadconfiguration.Devicesareavailableinmonolithicformforhybridapplicationsaswellasinhermeticornon-hermeticpackages.Monolithicdevicesarerecommendedforhighestfrequency,broad | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
封装/外壳：模具 功能：偏置网络 包装：卷带（TR） 描述：QUARTZ INDUCTOR NON HERMETIC CHI RF/IF，射频/中频和 RFID RF 其它 IC 和模块 | MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司 |  | | |
Product Change Notification 文件：2.81601 Mbytes Page：221 Pages | MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司 | | | |
封装/外壳：模具 功能：偏置网络 包装：卷带（TR） 描述：QUARTZ INDUCTOR NON HERMETIC CHI RF/IF，射频/中频和 RFID RF 其它 IC 和模块 | MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司 | | | |
Radial Leaded Glass Encapsulated Style 文件：330.36 Kbytes Page：2 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 |  | |
GC9产品属性
- 类型
描述
- 型号
GC9
- 制造商
MICROSEMI
- 制造商全称
Microsemi Corporation
- 功能描述
PASSIVE DEVICES - Spiral Bias Elements
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PEVSE |
23+24 |
DIP30 |
29850 |
原装原盘原标.保证每一片都来自原厂 |
|||
GC |
22+ |
DIP |
5000 |
进口原装!现货库存 |
|||
Galaxy |
1836+ |
COG |
9852 |
只做原装正品现货!或订货假一赔十! |
|||
FEVSY |
23+ |
DIP42 |
31286 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
23+ |
DIP |
3880 |
正品原装货价格低qq:2987726803 |
||||
XTW |
23+ |
QFN |
28706 |
绝对原厂支持只做自己现货优势 |
|||
Galaxy |
22+ |
COG |
3255 |
强势库存!原装现货! |
|||
PEVSE |
22+ |
DIP30 |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
|||
GALAXY/银河微 |
24+ |
COG |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
MICROCHIP |
23+ |
7300 |
专注配单,只做原装进口现货 |
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深圳科雨电子有限公司，联系人：卢小姐手机：18975515225 原装正品大量现货，有需要的可以联系我QQ:97877805微信：wei555222777
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