CONTROL DEVICES - BEAMLEAD PIN DIODES

DESCRIPTION Semiconductor mesa beam lead PIN diodes are designed for very low inductance, low resistance and moderately low capacitance with ultra fast switching characteristics. The structural details include thermal oxide junction passivation thus providing reliable operation with stable junc

CONTROL DEVICES - BEAMLEAD PIN DIODES

DESCRIPTION Semiconductor mesa beam lead PIN diodes are designed for very low inductance, low resistance and moderately low capacitance with ultra fast switching characteristics. The structural details include thermal oxide junction passivation thus providing reliable operation with stable junc

Beam Lead PIN Diodes for Broadband

N-Channel Enhancement Mode Power MOSFET

Description The 4946 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● High power and current handing capability ● Lead

VHB™ Tape Specialty Tapes

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Dual N-Channel 60 V (D-S) 175 째C MOSFET

文件：1.09215 Mbytes Page：9 Pages

VHB Tape - Specialty Tapes

文件：735.51 Kbytes Page：9 Pages

Dual N-Channel 60 V (D-S) 175 째C MOSFET

文件：1.95065 Mbytes Page：9 Pages