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GC2晶体管资料
GC214别名:GC214三极管、GC214晶体管、GC214晶体三极管
GC214生产厂家:(GRUNDIG)
GC214制作材料:Si-PNP
GC214性质:通用型 (Uni)
GC214封装形式:直插封装
GC214极限工作电压:
GC214最大电流允许值:
GC214最大工作频率:<1MHZ或未知
GC214引脚数:3
GC214最大耗散功率:
GC214放大倍数:
GC214图片代号:A-20
GC214vtest:0
GC214htest:999900
- GC214atest:0
GC214wtest:0
GC214代换 GC214用什么型号代替:BC214,
GC2价格
参考价格:¥2223.7307
型号:GC200-6B 品牌:GC 备注:这里有GC2多少钱,2025年最近7天走势,今日出价,今日竞价,GC2批发/采购报价,GC2行情走势销售排行榜,GC2报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
SMD Type Green Emitter Features Topview2016package ViewingAngle=600 Compatiblewithinfraredandvaporphasereflow solderprocess Highreliability UltrabrightGreen RoHScompliance Applications Opticalindicator. SwitchandSymbolDisplay. Description TheG C201607ATC | CTMICRO CT Micro International Corporation | |||
SMD Type Green Emitter Features Topview2016package ViewingAngle=600 Compatiblewithinfraredandvaporphasereflow solderprocess Highreliability UltrabrightGreen RoHScompliance Applications Opticalindicator. SwitchandSymbolDisplay. Description TheGC201607-MTC4 | CTMICRO CT Micro International Corporation | |||
Rectifier Diode FEATURES *Halogen-freetype *Leadfreeproduct,compliancetoRoHS *GPRC(Glasspassivatedrectifierchip)inside *Glasspassivatedcavity-freejunction *Leadlesschipform,noleaddamage *Lowforwardvoltagedrop *PlasticpackagehasUnderwritersLaboratoryFlammability Classi | ZOWIEZowie Technology Corporation 智威智威科技股份有限公司 | |||
Low VF Rectifier Diode FEATURES *Halogen-freetype *CompliancetoRoHSproduct *GPRC(Glasspassivatedrectifierchip)inside *Glasspassivatedcavity-freejunction *Leadlesschipform,noleaddamage *Lowforwardvoltagedrop *PlasticpackagehasUnderwritersLaboratoryFlammability Classification94 | ZOWIEZowie Technology Corporation 智威智威科技股份有限公司 | |||
Rectifier Diode FEATURES *Halogen-freetype *Leadfreeproduct,compliancetoRoHS *GPRC(Glasspassivatedrectifierchip)inside *Glasspassivatedcavity-freejunction *Leadlesschipform,noleaddamage *Lowforwardvoltagedrop *PlasticpackagehasUnderwritersLaboratoryFlammability Classi | ZOWIEZowie Technology Corporation 智威智威科技股份有限公司 | |||
Low VF Rectifier Diode FEATURES *Halogen-freetype *CompliancetoRoHSproduct *GPRC(Glasspassivatedrectifierchip)inside *Glasspassivatedcavity-freejunction *Leadlesschipform,noleaddamage *Lowforwardvoltagedrop *PlasticpackagehasUnderwritersLaboratoryFlammability Classification94 | ZOWIEZowie Technology Corporation 智威智威科技股份有限公司 | |||
Rectifier Diode FEATURES *Halogen-freetype *Leadfreeproduct,compliancetoRoHS *GPRC(Glasspassivatedrectifierchip)inside *Glasspassivatedcavity-freejunction *Leadlesschipform,noleaddamage *Lowforwardvoltagedrop *PlasticpackagehasUnderwritersLaboratoryFlammability Classi | ZOWIEZowie Technology Corporation 智威智威科技股份有限公司 | |||
Low VF Rectifier Diode FEATURES *Halogen-freetype *CompliancetoRoHSproduct *GPRC(Glasspassivatedrectifierchip)inside *Glasspassivatedcavity-freejunction *Leadlesschipform,noleaddamage *Lowforwardvoltagedrop *PlasticpackagehasUnderwritersLaboratoryFlammability Classification94 | ZOWIEZowie Technology Corporation 智威智威科技股份有限公司 | |||
Rectifier Diode FEATURES *Halogen-freetype *Leadfreeproduct,compliancetoRoHS *GPRC(Glasspassivatedrectifierchip)inside *Glasspassivatedcavity-freejunction *Leadlesschipform,noleaddamage *Lowforwardvoltagedrop *PlasticpackagehasUnderwritersLaboratoryFlammability Classi | ZOWIEZowie Technology Corporation 智威智威科技股份有限公司 | |||
Low VF Rectifier Diode FEATURES *Halogen-freetype *CompliancetoRoHSproduct *GPRC(Glasspassivatedrectifierchip)inside *Glasspassivatedcavity-freejunction *Leadlesschipform,noleaddamage *Lowforwardvoltagedrop *PlasticpackagehasUnderwritersLaboratoryFlammability Classification94 | ZOWIEZowie Technology Corporation 智威智威科技股份有限公司 | |||
Rectifier Diode FEATURES *Halogen-freetype *Leadfreeproduct,compliancetoRoHS *GPRC(Glasspassivatedrectifierchip)inside *Glasspassivatedcavity-freejunction *Leadlesschipform,noleaddamage *Lowforwardvoltagedrop *PlasticpackagehasUnderwritersLaboratoryFlammability Classi | ZOWIEZowie Technology Corporation 智威智威科技股份有限公司 | |||
Low VF Rectifier Diode FEATURES *Halogen-freetype *CompliancetoRoHSproduct *GPRC(Glasspassivatedrectifierchip)inside *Glasspassivatedcavity-freejunction *Leadlesschipform,noleaddamage *Lowforwardvoltagedrop *PlasticpackagehasUnderwritersLaboratoryFlammability Classification94 | ZOWIEZowie Technology Corporation 智威智威科技股份有限公司 | |||
Power Factor Correction (PFC) Description TheGC20N60usesadvancedsuperjunctiontechnology anddesigntoprovideexcellentRDS(ON),lowgatechargeand operationwithlowgatevoltages.Thisdeviceissuitablefor industry’sAC-DCSMPSrequirementforPFC,AC/DCpower conversion,andindustrialpowerapplication. Ap | GOFORDGOFORD SEMICONDUCTOR 谷峰半导体 | |||
Power Factor Correction (PFC) Description TheGC20N60usesadvancedsuperjunctiontechnology anddesigntoprovideexcellentRDS(ON),lowgatechargeand operationwithlowgatevoltages.Thisdeviceissuitablefor industry’sAC-DCSMPSrequirementforPFC,AC/DCpower conversion,andindustrialpowerapplication. Ap | GOFORDGOFORD SEMICONDUCTOR 谷峰半导体 | |||
Power Factor Correction (PFC) Description TheGC20N60usesadvancedsuperjunctiontechnology anddesigntoprovideexcellentRDS(ON),lowgatechargeand operationwithlowgatevoltages.Thisdeviceissuitablefor industry’sAC-DCSMPSrequirementforPFC,AC/DCpower conversion,andindustrialpowerapplication. Ap | GOFORDGOFORD SEMICONDUCTOR 谷峰半导体 | |||
N-Channel Enhancement Mode Power MOSFET Description TheGC20N65Fusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters | GOFORDGOFORD SEMICONDUCTOR 谷峰半导体 | |||
N-Channel Enhancement Mode Power MOSFET Description TheGC20N65FAusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. AEC-Q101Qualified Application lPowerswitch lDC/DCconverters | GOFORDGOFORD SEMICONDUCTOR 谷峰半导体 | |||
N-Channel Enhancement Mode Power MOSFET Description TheGC20N65FDusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters | GOFORDGOFORD SEMICONDUCTOR 谷峰半导体 | |||
N-Channel Enhancement Mode Power MOSFET Description TheGC20N65Musesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters | GOFORDGOFORD SEMICONDUCTOR 谷峰半导体 | |||
N-Channel Enhancement Mode Power MOSFET Description TheGC20N65Qusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters | GOFORDGOFORD SEMICONDUCTOR 谷峰半导体 | |||
N-Channel Enhancement Mode Power MOSFET Description TheGC20N65QDusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters | GOFORDGOFORD SEMICONDUCTOR 谷峰半导体 | |||
Power Factor Correction (PFC) Description TheGC20N65Tusesadvancedsuperjunctiontechnology anddesigntoprovideexcellentRDS(ON),lowgatechargeand operationwithlowgatevoltages.Thisdeviceissuitablefor industry’sAC-DCSMPSrequirementforPFC,AC/DCpower conversion,andindustrialpowerapplication. A | GOFORDGOFORD SEMICONDUCTOR 谷峰半导体 | |||
Power Factor Correction (PFC) Description TheGC20N70usesadvancedsuperjunctiontechnology anddesigntoprovideexcellentRDS(ON),lowgatechargeand operationwithlowgatevoltages.Thisdeviceissuitablefor industry’sAC-DCSMPSrequirementforPFC,AC/DCpower conversion,andindustrialpowerapplication. Ap | GOFORDGOFORD SEMICONDUCTOR 谷峰半导体 | |||
Power Factor Correction (PFC) Description TheGC20N70usesadvancedsuperjunctiontechnology anddesigntoprovideexcellentRDS(ON),lowgatechargeand operationwithlowgatevoltages.Thisdeviceissuitablefor industry’sAC-DCSMPSrequirementforPFC,AC/DCpower conversion,andindustrialpowerapplication. Ap | GOFORDGOFORD SEMICONDUCTOR 谷峰半导体 | |||
Power Factor Correction (PFC) Description TheGC20N70usesadvancedsuperjunctiontechnology anddesigntoprovideexcellentRDS(ON),lowgatechargeand operationwithlowgatevoltages.Thisdeviceissuitablefor industry’sAC-DCSMPSrequirementforPFC,AC/DCpower conversion,andindustrialpowerapplication. Ap | GOFORDGOFORD SEMICONDUCTOR 谷峰半导体 | |||
N-Channel Enhancement Mode Power MOSFET Description TheGC210N80FEusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters | GOFORDGOFORD SEMICONDUCTOR 谷峰半导体 | |||
Remote control decoding circuit 2.Mainfeatures: ●Wideoperatingvoltagerange(VCC=2.4-6.0V) ●Verylowpowerconsumptionandstrongnoisesuppressioncapability ●Upto12-bittri-stateaddresspinsor6-bitdatapins ●Anoscillatorwithanexternalresistor ●Therearelatchtypeandtransientoutputtype | SUPERCHIPSHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. 富满微富满微电子集团股份有限公司 | |||
Remote control decoding circuit 2.Mainfeatures: ●Wideoperatingvoltagerange(VCC=2.4-6.0V) ●Verylowpowerconsumptionandstrongnoisesuppressioncapability ●Upto12-bittri-stateaddresspinsor6-bitdatapins ●Anoscillatorwithanexternalresistor ●Therearelatchtypeandtransientoutputtype | SUPERCHIPSHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. 富满微富满微电子集团股份有限公司 | |||
Remote control decoding circuit 2.Mainfeatures: ●Wideoperatingvoltagerange(VCC=2.4-6.0V) ●Verylowpowerconsumptionandstrongnoisesuppressioncapability ●Upto12-bittri-stateaddresspinsor6-bitdatapins ●Anoscillatorwithanexternalresistor ●Therearelatchtypeandtransientoutputtype | SUPERCHIPSHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. 富满微富满微电子集团股份有限公司 | |||
N-Channel Enhancement Mode Power MOSFET Description TheGC280N65Fusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lLCD/LED/PDPTV lTelecom/ServerPowersupplies lAC-DCPowerSupply lLEDLighting | GOFORDGOFORD SEMICONDUCTOR 谷峰半导体 | |||
SMD Type Green Emitter Features Topview2835package ViewingAngle=600 Compatiblewithinfraredandvaporphasereflow solderprocess Highreliability UltrabrightGreen RoHScompliance Applications Opticalindicator. SwitchandSymbolDisplay. Description TheGC283507-ETC4isa | CTMICRO CT Micro International Corporation | |||
STEP RECOVERY DIODE COMB (HARMONIC) GENERATORS 文件:159.4 Kbytes Page:2 Pages | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | |||
包装:卷带(TR) 描述:CRYSTAL 20.0000MHZ 20PF 晶体,振荡器,谐振器 晶体 | PAMDiodes Incorporated 龙鼎微龙鼎微电子(上海)有限公司 | |||
封装/外壳:HC-49/US 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:CRYSTAL 20.0000MHZ 18PF SMD 晶体,振荡器,谐振器 晶体 | PAMDiodes Incorporated 龙鼎微龙鼎微电子(上海)有限公司 | |||
5 TO 2000 MHz TO-8 VOLTAGE CONTROLLED ATTENUATOR MODULE 文件:125.18 Kbytes Page:1 Pages | TELEDYNETeledyne Technologies Incorporated 华特力科 | |||
3.3V DIGITAL FILTER CHIP 文件:504.86 Kbytes Page:50 Pages | TITexas Instruments 德州仪器美国德州仪器公司 | |||
3.3V DIGITAL FILTER CHIP 文件:504.86 Kbytes Page:50 Pages | TITexas Instruments 德州仪器美国德州仪器公司 | |||
3.3V DIGITAL FILTER CHIP 文件:504.86 Kbytes Page:50 Pages | TITexas Instruments 德州仪器美国德州仪器公司 | |||
STEP RECOVERY DIODE COMB (HARMONIC) GENERATORS 文件:159.4 Kbytes Page:2 Pages | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | |||
Low VF Rectifier Diode 文件:64.4 Kbytes Page:2 Pages | ZOWIEZowie Technology Corporation 智威智威科技股份有限公司 | |||
Low VF Rectifier Diode 文件:64.4 Kbytes Page:2 Pages | ZOWIEZowie Technology Corporation 智威智威科技股份有限公司 | |||
Low VF Rectifier Diode 文件:64.4 Kbytes Page:2 Pages | ZOWIEZowie Technology Corporation 智威智威科技股份有限公司 | |||
Low VF Rectifier Diode 文件:64.4 Kbytes Page:2 Pages | ZOWIEZowie Technology Corporation 智威智威科技股份有限公司 | |||
Low VF Rectifier Diode 文件:64.4 Kbytes Page:2 Pages | ZOWIEZowie Technology Corporation 智威智威科技股份有限公司 | |||
Low VF Rectifier Diode 文件:64.4 Kbytes Page:2 Pages | ZOWIEZowie Technology Corporation 智威智威科技股份有限公司 | |||
Silicon Carbide Schottky Diode 文件:2.12829 Mbytes Page:7 Pages | GENESIC GeneSiC Semiconductor, Inc. | |||
Silicon Carbide Schottky Diode 文件:305.05 Kbytes Page:7 Pages | GENESIC GeneSiC Semiconductor, Inc. | |||
Silicon Carbide Schottky Diode 文件:305.05 Kbytes Page:7 Pages | GENESIC GeneSiC Semiconductor, Inc. | |||
Silicon Carbide Power Schottky Diode 文件:2.50408 Mbytes Page:7 Pages | GENESIC GeneSiC Semiconductor, Inc. | |||
Silicon Carbide Schottky Diode 文件:499.75 Kbytes Page:7 Pages | GENESIC GeneSiC Semiconductor, Inc. | |||
Silicon Carbide Schottky Diode 文件:499.75 Kbytes Page:7 Pages | GENESIC GeneSiC Semiconductor, Inc. | |||
AUDIO 文件:967.25 Kbytes Page:10 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | |||
AUDIO 文件:967.25 Kbytes Page:10 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | |||
Radial Leaded Glass Encapsulated Style 文件:330.36 Kbytes Page:2 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | |||
220W Single Output Battery Charger 文件:193.4 Kbytes Page:2 Pages | MEANWELLMean Well Enterprises Co., Ltd. 明纬电子明纬(广州)电子有限公司 | |||
220W Single Output Battery Charger 文件:179.14 Kbytes Page:2 Pages | MEANWELLMean Well Enterprises Co., Ltd. 明纬电子明纬(广州)电子有限公司 | |||
220W Single Output Battery Charger 文件:193.4 Kbytes Page:2 Pages | MEANWELLMean Well Enterprises Co., Ltd. 明纬电子明纬(广州)电子有限公司 | |||
220W Single Output Battery Charger 文件:179.14 Kbytes Page:2 Pages | TOTAL-POWER Total Power International | |||
220W Single Output Battery Charger 文件:179.14 Kbytes Page:2 Pages | MEANWELLMean Well Enterprises Co., Ltd. 明纬电子明纬(广州)电子有限公司 | |||
220W Single Output Battery Charger 文件:179.14 Kbytes Page:2 Pages | MEANWELLMean Well Enterprises Co., Ltd. 明纬电子明纬(广州)电子有限公司 |
GC2产品属性
- 类型
描述
- 型号
GC2
- 功能描述
STEP RECOVERY DIODE COMB(HARMONIC) GENERATORS
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
23+ |
65480 |
||||||
格科微 |
22+ |
CSP |
5000 |
格科微CIS产品全系列在售 |
|||
GC |
25+23+ |
LQFP |
37561 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
格科威 |
2126+ |
985 |
只做原装正品现货!或订货假一赔十! |
||||
格科微电子 |
2024+ |
BGA |
23000 |
图像传感器现货库存价格优势 |
|||
GC |
24+ |
LQFP |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
N/A |
23+ |
80000 |
专注配单,只做原装进口现货 |
||||
Herotek |
24+ |
模块 |
400 |
||||
GC |
21+ |
LQFP |
47 |
原装现货假一赔十 |
|||
GC |
2405+ |
Original |
50000 |
只做原装优势现货库存,渠道可追溯 |
GC2规格书下载地址
GC2参数引脚图相关
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