ENHANCED PERFORMANCE SURFACE MOUNT EPSM PACKAGED DEVICES

DESCRIPTION Our EPSM packaged devices are designed for the most demanding commercial and Military requirements where the inconsistent performance inherent in plastic surface mount packages cannot be tolerated. These package styles extend the surface mount construction format to 6 GHz for high per

Varactors (Surface Mount)

Our EPSM packaged devices are designed for the most demanding commercial and Military requirements where the inconsistent performance inherent in plastic surface mount packages cannot be tolerated. These package styles extend the surface mount construction format to 6 GHz for high performance wirele

Varactors (Surface Mount)

Our EPSM packaged devices are designed for the most demanding commercial and Military requirements where the inconsistent performance inherent in plastic surface mount packages cannot be tolerated. These package styles extend the surface mount construction format to 6 GHz for high performance wirele

ENHANCED PERFORMANCE SURFACE MOUNT EPSM?줙yperabrupt Varactor Diodes TM

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封装/外壳：模具 包装：散装 描述：SI TVAR NON HERMETIC EPSM SMT 分立半导体产品 二极管 - 可变电容（变容器，可变电抗器）

POWER TRANSISTORS(8.0A,60-100V,70W)

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS 8.0 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 70 WATTS

L-BAND SPDT SWITCH

DESCRIPTION UPG133G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us

L-BAND DPDT MMIC SWITCH

DESCRIPTION The µPG139GV is L-Band Double Pole, Double Throw (DPDT) switch developed for digital cellular or cordless telephone and PCS applications. This device feature low insertion loss, high handling power with low voltage operation. It is housed in a very small 8-pin plastic SSOP package ava

L-BAND SPDT SWITCH

DESCRIPTION µPG132G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us

L-BAND SPDT SWITCH

DESCRIPTION UPG133G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us