ENHANCED PERFORMANCE SURFACE MOUNT EPSM PACKAGED DEVICES

DESCRIPTION Our EPSM packaged devices are designed for the most demanding commercial and Military requirements where the inconsistent performance inherent in plastic surface mount packages cannot be tolerated. These package styles extend the surface mount construction format to 6 GHz for high per

涓流充电实时时钟

GC1302涓流充电计时芯片包含一个实时时钟/日历和31字节的静态RAM，通过简单的串行接口与微处理器通讯。这个实时时钟/日历提供年月日、时分秒信息，对于少于31天的月份月末会自动调整，还有闰年校正。由于有一个AM/PM指示器，时钟可以工作在12小时制或者24小时制。\n\n除计时功能外，还有如下特点：双管脚主电源和备用电源，可编程涓流充电器VCC1，还附加7字节的暂存器。\n\n广泛应用于电话、传真、便携式仪器及电池供电的仪器仪表等产品领域。\n\nGC1302采用SOP-8封装。 实时时钟计算年、月、日、时、分、秒、星期，直到2100年，并有闰年调节功能。\n31 x 8位通用暂存RAM。\n串行输入输出使管脚数最少。\n2.0V 至5.5V 宽电压范围操作。\n在2.0V 时工作电流小于300nA。\n读写时钟或RAM 数据时有单字节或多字节(脉冲串模式)数据传送方式。\n8 管脚 DIP 封装或可选的8 管脚表面安装SOP封装。\n简单的3线接口。\n与TTL 兼容 (VCC = 5V)。\n工作温度范围：-20℃ to +85℃。\n与DS1202/DS1302兼容。\n \n主要应用领域\n电话\n传真\n便携式仪器\n仪器仪表;

Varactors (Surface Mount)

Our EPSM packaged devices are designed for the most demanding commercial and Military requirements where the inconsistent performance inherent in plastic surface mount packages cannot be tolerated. These package styles extend the surface mount construction format to 6 GHz for high performance wirele

ENHANCED PERFORMANCE SURFACE MOUNT EPSM?줙yperabrupt Varactor Diodes TM

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涓流充电时基电路

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS MJL1302A -->PNP MJL3281A -->NPN • The MJL3281A and MJL1302A are PowerBase power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency • Gai

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS MJL1302A -->PNP MJL3281A -->NPN • The MJL3281A and MJL1302A are PowerBase power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency • Gai

TMOS POWER FET 42 AMPERES 30 VOLTS RDS(on) = 22 mohm

This advanced high cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplie

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 250 WATTS

Complementary NPN-PNP Silicon Power Bipolar Transistor The MJ3281A and MJ1302A are PowerBase power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency • Gain Complementary: — Gain Linearity from 100 mA to 7 A — Hi

MEDIUM POWER AMPLIFIER GaAs MMIC

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