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型号 功能描述 生产厂家 企业 LOGO 操作
GBU806F

Low VF Glass Passivated Bridge Rectifier

Features • Surge overload rating - 200 amperes peak • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique • The plastic material has UL flammability classification 94V-0 • Mounting position: Any Description Low VF Glass Passivated Bridge Rec

MULTICOMP

易络盟

GBU806F

超低正向电压桥式整流器

GBU/IF:8A/ Vol:600V/ VF@IF:4A=>0.95V/ Tj:-55 to +150℃/

HY

虹扬科技

GBU806F

Ideal for printed circuit board

文件:47.15 Kbytes Page:2 Pages

HY

虹扬科技

LOW VF GLASS PASSIVATED BRIDGE RECTIFIERS

文件:176.84 Kbytes Page:3 Pages

HY

虹扬科技

POWER TRANSISTORS(8.0A,150-200V,60W)

MOSPEC

统懋

8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS

This Darlington transistor is a high voltage, high speed device for use in horizontal deflection circuits in TV’s and CRT’s. • High Voltage: VCEV = 330 or 400 V • Fast Switching Speed: tc = 1.0 µs (max) • Low Saturation Voltage: VCE(sat) = 1.5 V (max) • Packaged in JEDEC TO–220AB • Da

MOTOROLA

摩托罗拉

SINGLE-PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A)

VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A FEATURES • Surge overload rating—200 Amperes peak • Low forward voltage drop and reverse leakage • Small size, simple installation • Plastic package has Underwriter Laboratory Flammability Classification 94V-O

PANJIT

強茂

DPAK SURFACE MOUNT SUPER FAST RECOVERY RECTIFIER(VOLTAGE - 200 to 600 Volts CURRENT - 8.0 Amperes)

VOLTAGE - 200 to 600 Volts CURRENT - 8.0 Amperes FEATURES • For surface mounted applications • Low profile package • Built-in strain relief • Easy pick and place • Superfast recovery times for high efficiency • Plastic package has Underwriters Laboratory Flammability Classification 94V-O •

PANJIT

強茂

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

FEATURES • Low Noise, High Gain • Operable at Low Voltage • Small Feed-back Capacitance Cre = 0.4 pF TYP. • Built-in 2 Transistors (2 × 2SC4959)

NEC

瑞萨

GBU806F产品属性

  • 类型

    描述

  • VRRM(V):

    600

  • IO(A):

    8

  • IFSM(A):

    220

  • VF(V):

    0.95

  • IR(uA):

    5

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