Single Phase 8.0 AMPS. Glass Passivated Bridge Rectifiers

Single Phase 8.0 AMPS. Glass Passivated Bridge Rectifiers Voltage Range 50 to 1000 Volts Current 8.0 Amperes Features UL Recognized File # E-96005 Ideal for printed circuit board Reliable low cost construction Plastic material has Underwriters Laboratory Flammability Classi

GLASS PASSIVATED BRIDGE RECTIFIERS

GLASS PASSIVATED BRIDGE RECTIFIERS REVERSE VOLTAGE - 50 to1000 Volts FORWARD CURRENT- 8.0Amperes FEATURES Rating to 1000V PRV Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique The plastic material has UL flammability classificatio

Single Phase 8.0AMP.Glass Passivated Bridge Rectifiers

Features ● Glass Passivated Die Construction ● High Case Dielectric Strength of 1500VRMS ● Low Reverse Leakage Current ● Surge Overload Rating to 200A Peak ● Ideal for Printed Circuit Board Applications ● Plastic Material: UL Flammability Classification Rating 94V-0 ● UL Listed Under Re

3-phase inverter based on STSPIN32F0251

Features • Input voltage 什om 20 V to 120 V DC/AC • STD17NF25 MOSFETs power stage featuring: - VDS = 250 V - Ros(on)max.= 0.165 Q • Overcurrent threshold set to 16 Apeak • Dual footprint for IGBT/MOSFET package: 一 DPAK - PowerFlat 6x5 • Single-shunt current sensing, suitable for: - Sensor

8A, 200V, Standard Bridge Rectifier

GLASS PASSIVATED BRIDGE RECTIFIERS

文件：500.25 Kbytes Page：2 Pages

封装/外壳：4-ESIP，GBU 包装：卷带（TR） 描述：DIODE BRIDGE 8A 200V GBU 分立半导体产品 二极管 - 桥式整流器

Single Phase 8.0 AMPS. Glass Passivated Bridge Rectifiers

文件：187.66 Kbytes Page：2 Pages

Single Phase 8.0 AMPS. Glass Passivated Bridge Rectifiers

文件：526.76 Kbytes Page：2 Pages

8A, 50V - 1000V Glass Passivated Single-Phase Bridge Rectifiers

文件：213.15 Kbytes Page：4 Pages

Glass Passivated Single-Phase Bridge Rectifier

文件：208.35 Kbytes Page：4 Pages

封装/外壳：4-ESIP，GBU 包装：卷带（TR） 描述：DIODE BRIDGE 8A 200V GBU 分立半导体产品 二极管 - 桥式整流器

2 W, 806 to 905 MHz UHF POWER AMPLIFIERS

The RF Line UHF Power Amplifiers Capable of wide power range control as encountered in portable cellular radio applications (30 dB typical). • MHW803–2 806–870 MHz • Specified 7.5 Volt Characteristics RF Input Power = 1 mW (0 dBm) RF Output Power = 2 Watts Minimum Gain (VControl

DARLINGTON POWER TRANSISTORS COMPLEMENTARY

These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built−in Base−Emitter Resistors to Limit Leakage − Multiplication • Choice of Packages − M

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

µPA803T has built-in 2 transistors which were developed for UHF. FEATURES • High fT fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz) • Small Collector Capacitance Cob = 0.7 pF TYP. (@VCB = 5 V, IE = 0, f = 1 MHz) • A Surface Mounting Package Adopted • Built-in 2 Transistors

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

µPA803T has built-in 2 transistors which were developed for UHF. FEATURES • High fT fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz) • Small Collector Capacitance Cob = 0.7 pF TYP. (@VCB = 5 V, IE = 0, f = 1 MHz) • A Surface Mounting Package Adopted • Built-in 2 Transistors