GLASS PASSIVATED BRIDGE RECTIFIERS

REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 10.0 Amperes FEATURES • Rating to 1000V PRV • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique • The plastic material has UL flammability classification 94V-0 • In complia

Single Phase 10.0 AMPS. Glass Passivated Bridge Rectifiers

FEATURES - Ideal for printed circuit board - High case dielectric strength of 1500 VRMS - High surge current capability - Typical IR less than 0.1μA - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free acc

Single Phase10.0AMP.Glass Passivated Bridge Rectifiers

Features ◇ Ideal for printed circuit board ◇ Reliable low cost construction ◇ Plastic material has Underwriters Laboratory Flammability Classification 94V-0 ◇ High case dielectric strength of 1500VRMS ◇ Surge overload rating to 200 amperes peak ◇ High temperature soldering guaranteed: 260°C

10A, 50V - 1000V Glass Passivated Single-Phase Bridge Rectifiers

文件：213.62 Kbytes Page：4 Pages

GLASS PASSIVATED BRIDGE RECTIFIERS

文件：188.13 Kbytes Page：2 Pages

SINGLE PHASE 10 AMP BRIDGE RECTIFIERS

文件：63.88 Kbytes Page：2 Pages

Glass Passivated Single-Phase Bridge Rectifier

文件：208.29 Kbytes Page：4 Pages

封装/外壳：4-SIP，GBU 包装：管件 描述：BRIDGE RECT 1PHASE 1KV 10A GBU 分立半导体产品 二极管 - 桥式整流器

Single Phase 10.0 AMPS. Glass Passivated Bridge Rectifiers

文件：167.39 Kbytes Page：2 Pages

Single Phase 10.0 AMPS. Glass Passivated Bridge Rectifiers

文件：531.9 Kbytes Page：2 Pages

Single Phase 10.0 AMPS. Glass Passivated Bridge Rectifiers

文件：192.84 Kbytes Page：2 Pages

Bridge Rectifiers

封装/外壳：4-SIP，GBU 包装：管件 描述：BRIDGE RECT 1PHASE 1KV 10A GBU 分立半导体产品 二极管 - 桥式整流器

PHASE CONTROL THYRISTOR

PHASE CONTROL THYRISTOR Repetitive voltage up to 2400 V Mean on-state current 1270 A Surge current 19 kA

Photo Interrupter

Photo Interrupter For contactless SW, object detection Overview CNA1007H is a transmissive photosensor in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elem

uP Compatible, Double-Buffered D to A Converters

文件：369.16 Kbytes Page：22 Pages

uP Compatible, Double-Buffered D to A Converters

文件：369.16 Kbytes Page：22 Pages

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

文件：38.41 Kbytes Page：2 Pages