丝印代码：GBJ401；Bridge Rectifiers

Features ● UL recognition, file #E230084 ● Thin single in-line package ● High surge current capability ● Solder dip 275 °C max. 7 s, per JESD 22-B106

ASEMI Bridge Rectifier

Features Plastic package has Underwriters Laboratory Flammability Classification 94V-0 High case dielectric strength of 1500VRMS Ideal for printed circuit boards High surge current capability

BRIDGE RECTIFIERS 3.0 to 6.0 Amps

BRIDGE RECTIFIERS 3.0 to 6.0 Amps BRIDGE RECTIFIERS 6.0 to 8.0 Amps

Single-phase Silicon Bridge Rectifier

Features • Low reverse leakage • High forward surge capability • 170 A Surge overload rating:170 Amperes peak

4A 100V Rectifying bridge

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GLASS PASSIVATED BRIDGE RECTIFIER

文件：953.37 Kbytes Page：2 Pages

SINGLE PHASE 4.0 AMP BRIDGE RECTIFIERS

文件：252.91 Kbytes Page：2 Pages

SINGLE PHASE 4.0 AMP BRIDGE RECTIFIERS

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标準桥式整流器

整流桥

普通桥式整流器

IN-LINE MINIATURE SINGLE PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - 4.0 Amperes)

FEATURES • Plastic material has Underwriters Laboratory Flammability Classification 94V-O • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique • Surge overload rating: 200 Amperes peak • Pb free product are available : 99 Sn above can meet Rohs

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances res

Fast Settling, Wideband High-Gain Monolithic Op Amp

文件：388.71 Kbytes Page：6 Pages

Fast Settling, Wideband High-Gain Monolithic Op Amp

文件：388.71 Kbytes Page：6 Pages

Fast Settling, Wideband High-Gain Monolithic Op Amp

文件：388.71 Kbytes Page：6 Pages