Mini size of Discrete semiconductor elements

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N-Channel Enhancement Mode MOSFET

Features • 30V/4A, RDS(ON) =15mΩ(typ.) @ VGS =10V RDS(ON) =25mΩ(typ.) @ VGS =4.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free Available (RoHS Compliant) Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems

N-Channel Enhancement Mode MOSFET

Features • 30V/4A, RDS(ON) =15mΩ(typ.) @ VGS =10V RDS(ON) =25mΩ(typ.) @ VGS =4.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free Available (RoHS Compliant) Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems

Triple video driver hybrid amplifier

DESCRIPTION Hybrid amplifier module comprising three video amplifiers in a SOT347 package. FEATURES • Transition times (10 to 90) with 45 V (p-p) swing and CL = 10 pF: – rise time (typ.) 2.5 ns – fall time (typ.) 2.1 ns • Low power consumption: 11 W with 25 MHz square wave • Minimum s

Triple video driver hybrid amplifier

DESCRIPTION Hybrid amplifier module comprising three video amplifiers in a SOT347 package. FEATURES • Transition times (10 to 90) with 45 V (p-p) swing and CL = 10 pF: – rise time (typ.) 2.5 ns – fall time (typ.) 2.1 ns • Low power consumption: 11 W with 25 MHz square wave • Minimum s

Dual 30V N-Channel PowerTrench MOSFET

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