位置：首页 > IC中文资料第1283页 > GAL22V10D-7
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 |  |   | |
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
封装/外壳：28-LCC（J 形引线） 包装：散装 描述：IC CPLD 10MC 5NS 28PLCC 集成电路（IC） CPLD（复杂可编程逻辑器件） | ETC 知名厂家 | ETC | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
封装/外壳：28-LCC（J 形引线） 包装：管件 描述：IC CPLD 10MC 7.5NS 28PLCC 集成电路（IC） CPLD（复杂可编程逻辑器件） | ETC 知名厂家 | ETC | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor 莱迪思莱迪思半导体公司 | | |
GAL22V10D-7产品属性
- 类型
描述
- 型号
GAL22V10D-7
- 功能描述
SPLD - 简单可编程逻辑器件 5V 22 I/O
- RoHS
否
- 制造商
Texas Instruments
- 逻辑系列
TICPAL22V10Z
- 大电池数量
10
- 最大工作频率
66 MHz
- 延迟时间
25 ns
- 工作电源电压
4.75 V to 5.25 V
- 电源电流
100 uA
- 最大工作温度
+ 75 C
- 最小工作温度
0 C
- 安装风格
Through Hole
- 封装/箱体
DIP-24
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
LACTTICE |
23+ |
PLCC28 |
15000 |
全新原装现货,价格优势 |
|||
Lattice Semiconductor Corporat |
23+ |
28-PLCC11.51x11.51 |
7300 |
专注配单,只做原装进口现货 |
|||
Lattice |
2318+ |
PLCC-28 |
4980 |
Lattice全系列进口原装特价 |
|||
LATTICE/莱迪斯 |
23+ |
PLCC |
50000 |
全新原装正品现货,支持订货 |
|||
LATTICE |
25+23+ |
New |
36784 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
LATTICE |
23+ |
PLCC28 |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
|||
Lattice |
E620VV01 |
56 |
公司优势库存 热卖中! |
||||
24+ |
PLCC |
4 |
|||||
LATTICE |
24+ |
PLCC |
21580 |
原装现货 |
|||
最新 |
2000 |
原装正品现货 |
GAL22V10D-7芯片相关品牌
GAL22V10D-7规格书下载地址
GAL22V10D-7参数引脚图相关
- ic交易
- ic厂家
- ic查询
- IC插座
- ic测试
- ic采购
- IC(集成电路)
- hynix
- hy57v161610
- hs25
- hs20
- hl2608
- HDMI连接器
- HDD
- h3000
- h20r120
- gps模块
- gpib
- GL850G
- gfd
- GALI-49
- GALI-4
- GALI-39
- GALI-33
- GALI-3
- GALI-29
- GALI-24
- GALI-21
- GALI-2
- GALI-19
- GALI-1
- GALI_59
- GALI_49
- GALI_39
- GALI_29
- GALI_19
- GAL6002
- GAL6001
- GAL504P
- GAL504N
- GAL26CV12-20LP
- GAL26CV12-20LJI
- GAL26CV12-20LJ
- GAL26CV12-20LD/883
- GAL26CV12-15LP
- GAL26CV1215LP
- GAL26CV12-15LJ
- GAL26CV12
- GAL26CLV12D-7LJ
- GAL26CLV12D-5LJ
- GAL26CLV12
- GAL22V8B-25LP
- GAL22V10D-7LPNI
- GAL22V10D-7LPN
- GAL22V10D-7LPI
- GAL22V10D-7LP
- GAL22V10D-7LJNI
- GAL22V10D-7LJN
- GAL22V10D-7LJI
- GAL22V10D-7LJ
- GAL22V10D-5LJN
- GAL22V10D-5LJI
- GAL22V10D-5LJ
- GAL22V10D5LJ
- GAL22V10D-4LJN
- GAL22V10D-4LJ
- GAL22V10D-25QPN
- GAL22V10D25QPN
- GAL22V10D-25QP
- GAL22V10D-25QJN
- GAL22V10D-25QJI
- GAL22V10D-25QJ
- GAL22V10D-25LS
- GAL22V10D-25LPNI
- GAL22V10D-25LPN
- GAL22V10D-25LPI
- GAL22V10D-25LP
- GAL22V10D25LP
- GAL22V10D-25LJNI
- GAL22V10D-25LJN
- GAL20V8
- GAL1883
- GAL16V8
- GAH504P
- GAH504N
- GAH404
- GAH403
- GAH402
- GAH401
- GAH304
- GAH303
- GAH302
- GAH301
- GAG01Z
- GAG01Y
- GAG01A
- GAG01
- GABJ506
- GABJ504
- GABJ503
GAL22V10D-7数据表相关新闻
GAli-5+原装，只有原装
GAli-5+原装，只有原装
2024-11-1GALI-4F+
GALI-4F+
2022-9-1GAL22V10D-25LJ，集成电路（IC）
全新原装，公司现货销售
2019-8-21GAL22V10D-25LP，集成电路（IC） 嵌入式-CPLD（复杂可编程逻辑器件）
全新原装，公司现货销售
2019-8-21GAL22V10D-15LPN原装现货特价销售集成电路（IC）
GAL22V10D-15LPN原装现货特价销售集成电路（IC）
2019-5-20GALI-21+单片放大器射频IC深圳市益中天科技发展有限公司
GALI-21+单片放大器射频IC
2019-4-9
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
