位置：首页 > IC中文资料第558页 > GAL22V10B
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les | Lattice 莱迪思 |   | ||
High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les | Lattice 莱迪思 | | ||
High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les | Lattice 莱迪思 | | ||
High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les | Lattice 莱迪思 | | ||
High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les | Lattice 莱迪思 | | ||
High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les | Lattice 莱迪思 | | ||
High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les | Lattice 莱迪思 | | ||
High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les | Lattice 莱迪思 | | ||
High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les | Lattice 莱迪思 | | ||
High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les | Lattice 莱迪思 | | ||
High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les | Lattice 莱迪思 | | ||
High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les | Lattice 莱迪思 | | ||
High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les | Lattice 莱迪思 | | ||
High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les | Lattice 莱迪思 | | ||
High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les | Lattice 莱迪思 | | ||
High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les | Lattice 莱迪思 | | ||
High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les | Lattice 莱迪思 | | ||
High Performance E2CMOS PLD Generic Array Logic™ | Lattice 莱迪思 | | ||
High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les | Lattice 莱迪思 | | ||
PAL22V10 Family, AmPAL22V10/A 24-Pin TTL Versatile PAL Device 文件：184 Kbytes Page：20 Pages | AMD 超威半导体 | | ||
High Speed UV Erasable Programmable Logic Device 文件：277.9 Kbytes Page：11 Pages | Atmel 爱特梅尔 | | ||
High Speed UV Erasable Programmable Logic Device 文件：217.63 Kbytes Page：9 Pages | Atmel 爱特梅尔 | | ||
High Speed UV Erasable Programmable Logic Device 文件：277.9 Kbytes Page：11 Pages | Atmel 爱特梅尔 | |
GAL22V10B产品属性
- 类型
描述
- 型号
GAL22V10B
- 制造商
LATTICE
- 功能描述
*
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
LATTE/莱迪斯 |
24+ |
NA/ |
4730 |
原装现货,当天可交货,原型号开票 |
|||
Lattice |
25+ |
PLCC |
1480 |
原装正品,假一罚十! |
|||
LATTICE |
24+ |
DIP24 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
LATTICE |
专业铁帽 |
CDIP |
67500 |
铁帽原装主营-可开原型号增税票 |
|||
LATTICE |
04+ |
DIP-24 |
839 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
LATTICE |
24+ |
PLCC |
2000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
LAT |
23+ |
65480 |
|||||
LATTICE/莱迪斯 |
2450+ |
PLCC |
9850 |
只做原装正品现货或订货假一赔十! |
|||
GAL |
25+ |
DIP-8 |
18000 |
原厂直接发货进口原装 |
|||
LATTICE |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
GAL22V10B芯片相关品牌
GAL22V10B规格书下载地址
GAL22V10B参数引脚图相关
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- GALI-2
- GALI-19
- GALI-1
- GALI_59
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- GALI_29
- GALI_19
- GAL6002
- GAL6001
- GAL504P
- GAL504N
- GAL22V10B-25LJI
- GAL22V10B-25LJ
- GAL22V10B25LJ
- GAL22V10B-25LD/883
- GAL22V10B-20LR/883
- GAL22V10B-20LPI
- GAL22V10B-20LD
- GAL22V10B-15QP
- GAL22V10B-15QJ
- GAL22V10B-15LR/883
- GAL22V10B-15LPI
- GAL22V10B-15LP
- GAL22V10B15LP
- GAL22V10B-15LJI
- GAL22V10B-15LJ
- GAL22V10B-15LD/883
- GAL22V10B-10LP
- GAL22V10B10LP
- GAL22V10B-10LJ
- GAL22V10B10LJ
- GAL22V10-30LVM
- GAL22V10-30LVI
- GAL22V10-30LVC
- GAL22V10-30LR/883
- GAL22V10-30LNM
- GAL22V10-30LNI
- GAL22V10-30LNC
- GAL22V10-30LJM
- GAL22V10-30LJI
- GAL22V10-30LJC
- GAL22V10-30LD/883
- GAL22V10-30
- GAL22V10-25P
- GAL22V10-25LVM
- GAL22V10-25LVI
- GAL22V10-25LVC
- GAL22V10-25LR/883
- GAL22V10-25LPI
- GAL22V10-25LP
- GAL22V10-25LNM
- GAL20V8
- GAL1883
- GAL16V8
- GAH504P
- GAH504N
- GAH404
- GAH403
- GAH402
- GAH401
- GAH304
- GAH303
- GAH302
- GAH301
- GAG01Z
- GAG01Y
- GAG01A
- GAG01
- GABJ506
- GABJ504
- GABJ503
GAL22V10B数据表相关新闻
GAL22V10B-20LD/883，GAL22V10B-25LJI，GAL22V10C-10LP，
GAL22V10B-20LD/883，GAL22V10B-25LJI，GAL22V10C-10LP，
2020-4-24GAL22V10D-10LPN，集成电路（IC）
全新原装，公司现货销售
2019-8-21GAL22V10D-15LJN简单可编程逻辑器件全新原装现货特价销售
GAL22V10D-15LJN简单可编程逻辑器件全新原装现货特价销售
2019-5-20GAL20V8B-25QJN公司原装现货/随时可以发货
GAL20V8B-25QJN公司原装现货/随时可以发货
2019-4-16GAL20V8C-10LJ公司原装现货/随时可以发货
GAL20V8C-10LJ公司原装现货/随时可以发货
2019-4-16GAL20V8C-5LJ公司原装现货/随时可以发货
GAL20V8C-5LJ公司原装现货/随时可以发货
2019-4-16
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