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型号	功能描述	生产厂家&企业	LOGO
GAL16V8D-10LJ	HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL16V8,at3.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestspeedperformanceavailableinthePLDmarket.Highspeederasetimes( Features •HIGHPERFORMANCE	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10LJ	AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10LJI	AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10LJI	HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL16V8,at3.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestspeedperformanceavailableinthePLDmarket.Highspeederasetimes( Features •HIGHPERFORMANCE	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10LJN	AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10LJNI	AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10LP	HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL16V8,at3.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestspeedperformanceavailableinthePLDmarket.Highspeederasetimes( Features •HIGHPERFORMANCE	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10LP	AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10LPI	AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10LPI	HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL16V8,at3.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestspeedperformanceavailableinthePLDmarket.Highspeederasetimes( Features •HIGHPERFORMANCE	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10LPN	AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10LPNI	AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10LS	AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10LS	HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL16V8,at3.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestspeedperformanceavailableinthePLDmarket.Highspeederasetimes( Features •HIGHPERFORMANCE	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10QJ	HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL16V8,at3.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestspeedperformanceavailableinthePLDmarket.Highspeederasetimes( Features •HIGHPERFORMANCE	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10QJ	AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10QJN	AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10QP	AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10QP	HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL16V8,at3.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestspeedperformanceavailableinthePLDmarket.Highspeederasetimes( Features •HIGHPERFORMANCE	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10QPN	AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10LD	HighPerformanceE2CMOSPLDGenericArrayLogic? 文件：293.59 Kbytes Page：8 Pages	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10LJ	HighPerformanceE2CMOSPLD 文件：340.72 Kbytes Page：23 Pages	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10LJ	HighPerformanceE2CMOSPLDGenericArrayLogic? 文件：339.82 Kbytes Page：23 Pages	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10LJ	HighPerformanceE2CMOSPLDGenericArrayLogic? 文件：654.14 Kbytes Page：24 Pages	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10LJ	HighPerformanceE2CMOSPLDGenericArrayLogic? 文件：395.51 Kbytes Page：22 Pages	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10LJI	HighPerformanceE2CMOSPLDGenericArrayLogic? 文件：395.51 Kbytes Page：22 Pages	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10LJI	封装/外壳：20-LCC（J 形引线）包装：管件描述：IC CPLD 8MC 10NS 20PLCC 集成电路（IC） CPLD（复杂可编程逻辑器件）	ETC 知名厂家	ETC
GAL16V8D-10LJI	HighPerformanceE2CMOSPLDGenericArrayLogic? 文件：654.14 Kbytes Page：24 Pages	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10LJI	HighPerformanceE2CMOSPLDGenericArrayLogic? 文件：339.82 Kbytes Page：23 Pages	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10LJI	HighPerformanceE2CMOSPLD 文件：340.72 Kbytes Page：23 Pages	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10LJN	HighPerformanceE2CMOSPLD 文件：340.72 Kbytes Page：23 Pages	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10LJN	HighPerformanceE2CMOSPLDGenericArrayLogic? 文件：654.14 Kbytes Page：24 Pages	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10LJN	封装/外壳：20-LCC（J 形引线）包装：托盘描述：IC CPLD 8MC 10NS 20PLCC 集成电路（IC） CPLD（复杂可编程逻辑器件）	ETC 知名厂家	ETC
GAL16V8D-10LJNI	HighPerformanceE2CMOSPLDGenericArrayLogic? 文件：654.14 Kbytes Page：24 Pages	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10LP	HighPerformanceE2CMOSPLDGenericArrayLogic? 文件：395.51 Kbytes Page：22 Pages	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10LP	HighPerformanceE2CMOSPLDGenericArrayLogic? 文件：654.14 Kbytes Page：24 Pages	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10LP	HighPerformanceE2CMOSPLDGenericArrayLogic? 文件：339.82 Kbytes Page：23 Pages	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10LP	HighPerformanceE2CMOSPLD 文件：340.72 Kbytes Page：23 Pages	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10LPI	HighPerformanceE2CMOSPLD 文件：340.72 Kbytes Page：23 Pages	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10LPI	HighPerformanceE2CMOSPLDGenericArrayLogic? 文件：395.51 Kbytes Page：22 Pages	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10LPI	HighPerformanceE2CMOSPLDGenericArrayLogic? 文件：339.82 Kbytes Page：23 Pages	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10LPI	HighPerformanceE2CMOSPLDGenericArrayLogic? 文件：654.14 Kbytes Page：24 Pages	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10LPN	HighPerformanceE2CMOSPLDGenericArrayLogic? 文件：654.14 Kbytes Page：24 Pages	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10LPN	HighPerformanceE2CMOSPLD 文件：340.72 Kbytes Page：23 Pages	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10LPNI	HighPerformanceE2CMOSPLDGenericArrayLogic? 文件：654.14 Kbytes Page：24 Pages	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10LR	HighPerformanceE2CMOSPLDGenericArrayLogic? 文件：293.59 Kbytes Page：8 Pages	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10LS	HighPerformanceE2CMOSPLD 文件：340.72 Kbytes Page：23 Pages	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10LS	HighPerformanceE2CMOSPLDGenericArrayLogic? 文件：339.82 Kbytes Page：23 Pages	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10LS	HighPerformanceE2CMOSPLDGenericArrayLogic? 文件：654.14 Kbytes Page：24 Pages	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10QJ	HighPerformanceE2CMOSPLDGenericArrayLogic? 文件：339.82 Kbytes Page：23 Pages	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10QJ	HighPerformanceE2CMOSPLDGenericArrayLogic? 文件：654.14 Kbytes Page：24 Pages	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10QJ	HighPerformanceE2CMOSPLDGenericArrayLogic? 文件：395.51 Kbytes Page：22 Pages	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10QJ	HighPerformanceE2CMOSPLD 文件：340.72 Kbytes Page：23 Pages	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10QJN	HighPerformanceE2CMOSPLD 文件：340.72 Kbytes Page：23 Pages	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10QJN	HighPerformanceE2CMOSPLDGenericArrayLogic? 文件：654.14 Kbytes Page：24 Pages	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10QP	HighPerformanceE2CMOSPLDGenericArrayLogic? 文件：395.51 Kbytes Page：22 Pages	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10QP	HighPerformanceE2CMOSPLDGenericArrayLogic? 文件：339.82 Kbytes Page：23 Pages	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10QP	HighPerformanceE2CMOSPLDGenericArrayLogic? 文件：654.14 Kbytes Page：24 Pages	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10QP	HighPerformanceE2CMOSPLD 文件：340.72 Kbytes Page：23 Pages	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10QPN	HighPerformanceE2CMOSPLD 文件：340.72 Kbytes Page：23 Pages	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司

GAL16V8D-10产品属性

类型
描述
型号
GAL16V8D-10
制造商
LATTICE
制造商全称
Lattice Semiconductor
功能描述
High Performance E2CMOS PLD Generic Array Logic

GAL16V8D-10供应商更多...

更新时间：2025-8-1 10:06:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市恒创达实业有限公司	GAL16V8D-10QJ		17+		6200	100%原装正品现货	询价
深圳市富芯乐电子科技有限公司	GAL16V8D-10LS	LATTICE	24+	SOIC	3600	只做原装正品现货欢迎来电查询15919825718	询价
深圳市华来深电子有限公司	GAL16V8D-10LS	LATTICE	23+	SSOP	8560	受权代理!全新原装现货特价热卖!	询价
深圳市芯诚实创科技有限公司	GAL16V8D-10QJ	LATTICE	2022	PLCC-20	8485	全新原装现货	询价
瀚佳科技(深圳)有限公司	GAL16V8D-10QJ	Lattice Semiconductor Corporat	24+	20-PLCC(9x9)	56200	一级代理/放心采购	询价
深圳市力拓辉电子有限公司	GAL16V8D-10QJ	LATTICE	22+	PLCC-20	5000	只做原装,假一赔十	询价
深圳市毅创弘电子科技有限公司	GAL16V8D-10QJ	LatticeSemiconductorCorp	24+	20-PLCC(9x9)	66800	原厂授权一级代理,专注汽车、医疗、工业、新能源！	询价
深圳市威尔健半导体有限公司	GAL16V8D-10QJ	LATTICE/莱迪斯	23+	PLCC20	50000	全新原装正品现货,支持订货	询价
深圳市创新迹电子有限公司	GAL16V8D-10QJ	Lattice Semiconductor Corporat	23+	20-PLCC9x9	7300	专注配单,只做原装进口现货	询价
深圳市河锋鑫科技有限公司	GAL16V8D10QJ	Lattice Semiconductor Corporat	22+	20PLCC	9000	原厂渠道,现货配单	询价

GAL16V8D-10芯片相关品牌

GAL16V8D-10规格书下载地址

GAL16V8D-10参数引脚图相关

GAL16V8D-10数据表相关新闻

G9SX-BC202-RT DC24 控制器 - 机械安全通用 24VDC 电源 DIN 轨道
G9SX-BC202-RTDC24控制器-机械安全通用24VDC电源DIN轨道
2024-9-18
GA355QR7GF222KW01L
www.58chip.com
2022-5-20
G950-06210-01
開發板及套件-ARMThisnewDevBoardversionhasthesamebuildastheexisting1GBDevBoardwith4GBRAMbuiltin.
2021-1-18
GAL16V8D-15LJN
搜索： SMD/SMTSPLD-简单可编程逻辑器件,TSSOP-20SPLD-简单可编程逻辑器件,TSSOP-20SPLD-简单可编程逻辑器件,STQFN-12SPLD-简单可编程逻辑器件
2020-7-13
GAL16V8D-15LD/883产品规格参数
GAL16V8D-15LD/883
2020-7-10
GAL16V8D-15LD/883
SPLD-简单可编程逻辑器件
2019-12-18

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GAL16V8D-10产品属性

GAL16V8D-10供应商更多...

GAL16V8D-10芯片相关品牌

GAL16V8D-10规格书下载地址

GAL16V8D-10参数引脚图相关

GAL16V8D-10数据表相关新闻

G9SX-BC202-RT DC24 控制器 - 机械安全 通用 24VDC 电源 DIN 轨道

GA355QR7GF222KW01L

G950-06210-01

GAL16V8D-15LJN

GAL16V8D-15LD/883产品规格参数

GAL16V8D-15LD/883

DdatasheetPDF页码索引

G9SX-BC202-RT DC24 控制器 - 机械安全通用 24VDC 电源 DIN 轨道