| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
GA4A3Q | RESISTOR BUILT-IN TYPE NPN TRANSISTOR FEATURES • Compact package • Resistors built-in type • Complementary to GN4xxx | NEC 瑞萨 |   | |
GA4A3Q | SILICON TRANSISTOR RESISTOR BUILT-IN TYPE NPN TRANSISTOR FEATURES • Compact package • Resistors built-in type • Complementary to GN4xxx | RENESAS 瑞萨 | | |
GA4A3Q | Transistor | RENESAS 瑞萨 | | |
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener voltage provide flexible application. | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application. | RENESAS 瑞萨 | | ||
RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES • Compact package • Resistors built-in type • Complementary to KA4xxx | NEC 瑞萨 | | ||
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply 文件：56.36 Kbytes Page：7 Pages | RENESAS 瑞萨 | |
GA4A3Q产品属性
- 类型
描述
- Vcbo (V)：
60
- VCEO (V)：
50
- Vebo (V)：
5
- 汽车业：
YES
- Ic (mA)：
100
- 等效电路：
A
- R1 (kΩ)：
1
- R2 (kΩ)：
10
- hfe1最小值：
35
- hfe1最大值：
100
- hfe2最小值：
80
- Pt (mW)：
150
- 封装类型：
SSP
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
SOT323-3 |
45000 |
||||
NEC |
23+ |
SOT323-3 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
GA4A3Q规格书下载地址
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