| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
G86N06K | 丝印代码：G86N06；N-Channel Enhancement Mode Power MOSFET Description The G86N06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 |   | |
G86N06K | 60V N Channel TRENCH MOSFET The G86N06K uses advanced trench technology to provide excellent RDS(ON), low gate charge and rugged EAS capability. This device is suitable for PWM, load switching\n\nespecially for E-Bike controller application. • High power and current handing capability\n• RoHS Compliant; | GOFORD 谷峰半导体 | | |
丝印代码：G86N06；N-Channel Enhancement Mode Power MOSFET Description The G86N06KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | |
G86N06K产品属性
- 类型
描述
- Package：
TO-252
- Type：
N
- ESD Diode：
NO
- Vds(V)：
60
- Vgs(V)：
±20
- Id(A)：
80
- Pd(W)：
110
- Vgs(th)max(V)：
4
- Rds(on)mΩ(typ)@Vgs=10V：
6.6
- Rds(on)mΩ(max)@Vgs=10V：
8
- Qg(nC)：
61
- Qgs(nC)：
16
- Qgd(nC)：
20
- Ciss(pF)：
3335
- Crss(pF)：
210
- Technology：
TRENCH
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
26+ |
N/A |
46000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
GOFORD(谷峰) |
2447 |
TO-252 |
105000 |
2500个/圆盘一级代理专营品牌!原装正品,优势现货, |
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G86N06K规格书下载地址
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DdatasheetPDF页码索引
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