N-Channel Enhancement Mode Power MOSFET

Description The G80N03K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

Trench Mosfet

N-Channel Enhancement Mode Power MOSFET

Description The G80N03KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

N-Channel 30-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC

N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Green Device Available Description: The ADM80N03Z uses advanced trench technology and design to provide excellent RDS(ON) with l

N-Channel 30-V (D-S) MOSFET

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Fast Switching Characteristic

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Fast Switching Characteristic

文件：82.72 Kbytes Page：7 Pages