Silicon Power Rectifiers

Edal Series G power rectifiers are stud mounted DO-8 packages. Because the silicon junction is carefully fitted within a glass-to-metal hermetically sealed case, reliable operation is assured, even with extreme humidity and under other severe environmental conditions. The series G power rectifiers

PDP TRENCH IGBT

Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on)and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150°C operating junction temperatur

Silicon Power Rectifiers

Edal Series F power rectifiers are stud mounted DO-5 packages. Because the silicon junction is carefully fitted within a glass-to-metal hermetically sealed case, reliable operation is assured, even with extreme humidity and under other severe environmental conditions. The series F power rectifiers

Silicon Power Rectifiers

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Sub miniature package: 2.0 x 1.6 x 1.0 mm Frequency from 0.75 MHz up to 80 MHz

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N-CHANNEL MOSFET

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