| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (ON) trench IGBT technology • Low switching losses • Maximum junction temperature 175 °C • Square RBSOA • 100 of the parts tested for ILM • Positive VCE (ON) temperature co-efficient • Tight parameter distribution • Lead -Free Benefits • High efficiency in a wide range | IRF |   | ||
INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (ON) trench IGBT technology • Low switching losses • Maximum junction temperature 175 °C • Square RBSOA • 100 of the parts tested for ILM • Positive VCE (ON) temperature co-efficient • Tight parameter distribution • Lead -Free Benefits • High efficiency in a wide range | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：443.75 Kbytes Page：11 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：443.75 Kbytes Page：11 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR 文件：295.63 Kbytes Page：10 Pages | IRF | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
2023+ |
TO-220AB |
50000 |
原装现货 |
|||
IR(国际整流器) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
IR |
23+ |
7000 |
|||||
Infineon Technologies |
23+ |
原装 |
8000 |
只做原装现货 |
|||
Infineon Technologies |
22+ |
TO247AC |
9000 |
原厂渠道,现货配单 |
|||
IR |
26+ |
SOD123W |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
INFINEON/英飞凌 |
24+ |
TO220 |
39197 |
郑重承诺只做原装进口现货 |
|||
VISHAY |
24+ |
TO-247 |
12000 |
VISHAY专营进口原装现货假一赔十 |
|||
IR |
24+ |
TO-3P |
1070 |
||||
原装 |
最新 |
TO220 |
8900 |
公司原装现货特价长期供货欢迎来电咨询 |
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DdatasheetPDF页码索引
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