位置：首页 > IC中文资料第2004页 > G524
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
G524 | PowerDistributionSwitch 文件：109.33 Kbytes Page：1 Pages | GMTGlobal Mixed-mode Technology 致新科技 |  |   |
PowerDistributionSwitch Features -70mΩHigh-SideMOSFET(G524A,G524B,G524C,G524D) -Availablewith4VersionsofCurrentLimitswithFoldback -OperatingRange:2.7Vto5.5V -1mSTypicalRiseTime -FastOvercurrentResponse-1.5μs(TYPICAL) -UndervoltageLockout -130μAQuiescentSupplyCurrent -1μAMaximum | GMTGlobal Mixed-mode Technology 致新科技 | | | |
PowerDistributionSwitch Features -70mΩHigh-SideMOSFET(G524A,G524B,G524C,G524D) -Availablewith4VersionsofCurrentLimitswithFoldback -OperatingRange:2.7Vto5.5V -1mSTypicalRiseTime -FastOvercurrentResponse-1.5μs(TYPICAL) -UndervoltageLockout -130μAQuiescentSupplyCurrent -1μAMaximum | GMTGlobal Mixed-mode Technology 致新科技 | | | |
PowerDistributionSwitch Features -70mΩHigh-SideMOSFET(G524A,G524B,G524C,G524D) -Availablewith4VersionsofCurrentLimitswithFoldback -OperatingRange:2.7Vto5.5V -1mSTypicalRiseTime -FastOvercurrentResponse-1.5μs(TYPICAL) -UndervoltageLockout -130μAQuiescentSupplyCurrent -1μAMaximum | GMTGlobal Mixed-mode Technology 致新科技 | | | |
PowerDistributionSwitch Features -70mΩHigh-SideMOSFET(G524A,G524B,G524C,G524D) -Availablewith4VersionsofCurrentLimitswithFoldback -OperatingRange:2.7Vto5.5V -1mSTypicalRiseTime -FastOvercurrentResponse-1.5μs(TYPICAL) -UndervoltageLockout -130μAQuiescentSupplyCurrent -1μAMaximum | GMTGlobal Mixed-mode Technology 致新科技 | | | |
PowerDistributionSwitch Features -70mΩHigh-SideMOSFET(G524A,G524B,G524C,G524D) -Availablewith4VersionsofCurrentLimitswithFoldback -OperatingRange:2.7Vto5.5V -1mSTypicalRiseTime -FastOvercurrentResponse-1.5μs(TYPICAL) -UndervoltageLockout -130μAQuiescentSupplyCurrent -1μAMaximum | GMTGlobal Mixed-mode Technology 致新科技 | | | |
PowerDistributionSwitch Features -70mΩHigh-SideMOSFET(G524A,G524B,G524C,G524D) -Availablewith4VersionsofCurrentLimitswithFoldback -OperatingRange:2.7Vto5.5V -1mSTypicalRiseTime -FastOvercurrentResponse-1.5μs(TYPICAL) -UndervoltageLockout -130μAQuiescentSupplyCurrent -1μAMaximum | GMTGlobal Mixed-mode Technology 致新科技 | | | |
PowerDistributionSwitch Features -70mΩHigh-SideMOSFET(G524A,G524B,G524C,G524D) -Availablewith4VersionsofCurrentLimitswithFoldback -OperatingRange:2.7Vto5.5V -1mSTypicalRiseTime -FastOvercurrentResponse-1.5μs(TYPICAL) -UndervoltageLockout -130μAQuiescentSupplyCurrent -1μAMaximum | GMTGlobal Mixed-mode Technology 致新科技 | | | |
PowerDistributionSwitch Features -70mΩHigh-SideMOSFET(G524A,G524B,G524C,G524D) -Availablewith4VersionsofCurrentLimitswithFoldback -OperatingRange:2.7Vto5.5V -1mSTypicalRiseTime -FastOvercurrentResponse-1.5μs(TYPICAL) -UndervoltageLockout -130μAQuiescentSupplyCurrent -1μAMaximum | GMTGlobal Mixed-mode Technology 致新科技 | | | |
PowerDistributionSwitch Features -70mΩHigh-SideMOSFET(G524A,G524B,G524C,G524D) -Availablewith4VersionsofCurrentLimitswithFoldback -OperatingRange:2.7Vto5.5V -1mSTypicalRiseTime -FastOvercurrentResponse-1.5μs(TYPICAL) -UndervoltageLockout -130μAQuiescentSupplyCurrent -1μAMaximum | GMTGlobal Mixed-mode Technology 致新科技 | | | |
PowerDistributionSwitch Features -70mΩHigh-SideMOSFET(G524A,G524B,G524C,G524D) -Availablewith4VersionsofCurrentLimitswithFoldback -OperatingRange:2.7Vto5.5V -1mSTypicalRiseTime -FastOvercurrentResponse-1.5μs(TYPICAL) -UndervoltageLockout -130μAQuiescentSupplyCurrent -1μAMaximum | GMTGlobal Mixed-mode Technology 致新科技 | | | |
PowerDistributionSwitch Features -70mΩHigh-SideMOSFET(G524A,G524B,G524C,G524D) -Availablewith4VersionsofCurrentLimitswithFoldback -OperatingRange:2.7Vto5.5V -1mSTypicalRiseTime -FastOvercurrentResponse-1.5μs(TYPICAL) -UndervoltageLockout -130μAQuiescentSupplyCurrent -1μAMaximum | GMTGlobal Mixed-mode Technology 致新科技 | | | |
PowerDistributionSwitch Features -70mΩHigh-SideMOSFET(G524A,G524B,G524C,G524D) -Availablewith4VersionsofCurrentLimitswithFoldback -OperatingRange:2.7Vto5.5V -1mSTypicalRiseTime -FastOvercurrentResponse-1.5μs(TYPICAL) -UndervoltageLockout -130μAQuiescentSupplyCurrent -1μAMaximum | GMTGlobal Mixed-mode Technology 致新科技 | | | |
PowerDistributionSwitch Features -70mΩHigh-SideMOSFET(G524A,G524B,G524C,G524D) -Availablewith4VersionsofCurrentLimitswithFoldback -OperatingRange:2.7Vto5.5V -1mSTypicalRiseTime -FastOvercurrentResponse-1.5μs(TYPICAL) -UndervoltageLockout -130μAQuiescentSupplyCurrent -1μAMaximum | GMTGlobal Mixed-mode Technology 致新科技 | | | |
PowerDistributionSwitch Features -70mΩHigh-SideMOSFET(G524A,G524B,G524C,G524D) -Availablewith4VersionsofCurrentLimitswithFoldback -OperatingRange:2.7Vto5.5V -1mSTypicalRiseTime -FastOvercurrentResponse-1.5μs(TYPICAL) -UndervoltageLockout -130μAQuiescentSupplyCurrent -1μAMaximum | GMTGlobal Mixed-mode Technology 致新科技 | | | |
PowerDistributionSwitch Features -70mΩHigh-SideMOSFET(G524A,G524B,G524C,G524D) -Availablewith4VersionsofCurrentLimitswithFoldback -OperatingRange:2.7Vto5.5V -1mSTypicalRiseTime -FastOvercurrentResponse-1.5μs(TYPICAL) -UndervoltageLockout -130μAQuiescentSupplyCurrent -1μAMaximum | GMTGlobal Mixed-mode Technology 致新科技 | | | |
PowerDistributionSwitch Features -70mΩHigh-SideMOSFET(G524A,G524B,G524C,G524D) -Availablewith4VersionsofCurrentLimitswithFoldback -OperatingRange:2.7Vto5.5V -1mSTypicalRiseTime -FastOvercurrentResponse-1.5μs(TYPICAL) -UndervoltageLockout -130μAQuiescentSupplyCurrent -1μAMaximum | GMTGlobal Mixed-mode Technology 致新科技 | | | |
PowerDistributionSwitch Features -70mΩHigh-SideMOSFET(G524A,G524B,G524C,G524D) -Availablewith4VersionsofCurrentLimitswithFoldback -OperatingRange:2.7Vto5.5V -1mSTypicalRiseTime -FastOvercurrentResponse-1.5μs(TYPICAL) -UndervoltageLockout -130μAQuiescentSupplyCurrent -1μAMaximum | GMTGlobal Mixed-mode Technology 致新科技 | | | |
PowerDistributionSwitch Features -70mΩHigh-SideMOSFET(G524A,G524B,G524C,G524D) -Availablewith4VersionsofCurrentLimitswithFoldback -OperatingRange:2.7Vto5.5V -1mSTypicalRiseTime -FastOvercurrentResponse-1.5μs(TYPICAL) -UndervoltageLockout -130μAQuiescentSupplyCurrent -1μAMaximum | GMTGlobal Mixed-mode Technology 致新科技 | | | |
PowerDistributionSwitch Features -70mΩHigh-SideMOSFET(G524A,G524B,G524C,G524D) -Availablewith4VersionsofCurrentLimitswithFoldback -OperatingRange:2.7Vto5.5V -1mSTypicalRiseTime -FastOvercurrentResponse-1.5μs(TYPICAL) -UndervoltageLockout -130μAQuiescentSupplyCurrent -1μAMaximum | GMTGlobal Mixed-mode Technology 致新科技 | | | |
PowerDistributionSwitch Features -70mΩHigh-SideMOSFET(G524A,G524B,G524C,G524D) -Availablewith4VersionsofCurrentLimitswithFoldback -OperatingRange:2.7Vto5.5V -1mSTypicalRiseTime -FastOvercurrentResponse-1.5μs(TYPICAL) -UndervoltageLockout -130μAQuiescentSupplyCurrent -1μAMaximum | GMTGlobal Mixed-mode Technology 致新科技 | | | |
PowerDistributionSwitch Features -70mΩHigh-SideMOSFET(G524A,G524B,G524C,G524D) -Availablewith4VersionsofCurrentLimitswithFoldback -OperatingRange:2.7Vto5.5V -1mSTypicalRiseTime -FastOvercurrentResponse-1.5μs(TYPICAL) -UndervoltageLockout -130μAQuiescentSupplyCurrent -1μAMaximum | GMTGlobal Mixed-mode Technology 致新科技 | | | |
PowerDistributionSwitch Features -70mΩHigh-SideMOSFET(G524A,G524B,G524C,G524D) -Availablewith4VersionsofCurrentLimitswithFoldback -OperatingRange:2.7Vto5.5V -1mSTypicalRiseTime -FastOvercurrentResponse-1.5μs(TYPICAL) -UndervoltageLockout -130μAQuiescentSupplyCurrent -1μAMaximum | GMTGlobal Mixed-mode Technology 致新科技 | | | |
PowerDistributionSwitch Features -70mΩHigh-SideMOSFET(G524A,G524B,G524C,G524D) -Availablewith4VersionsofCurrentLimitswithFoldback -OperatingRange:2.7Vto5.5V -1mSTypicalRiseTime -FastOvercurrentResponse-1.5μs(TYPICAL) -UndervoltageLockout -130μAQuiescentSupplyCurrent -1μAMaximum | GMTGlobal Mixed-mode Technology 致新科技 | | | |
PowerDistributionSwitch Features -70mΩHigh-SideMOSFET(G524A,G524B,G524C,G524D) -Availablewith4VersionsofCurrentLimitswithFoldback -OperatingRange:2.7Vto5.5V -1mSTypicalRiseTime -FastOvercurrentResponse-1.5μs(TYPICAL) -UndervoltageLockout -130μAQuiescentSupplyCurrent -1μAMaximum | GMTGlobal Mixed-mode Technology 致新科技 | | | |
PowerDistributionSwitch Features -70mΩHigh-SideMOSFET(G524A,G524B,G524C,G524D) -Availablewith4VersionsofCurrentLimitswithFoldback -OperatingRange:2.7Vto5.5V -1mSTypicalRiseTime -FastOvercurrentResponse-1.5μs(TYPICAL) -UndervoltageLockout -130μAQuiescentSupplyCurrent -1μAMaximum | GMTGlobal Mixed-mode Technology 致新科技 | | | |
PowerDistributionSwitch Features -70mΩHigh-SideMOSFET(G524A,G524B,G524C,G524D) -Availablewith4VersionsofCurrentLimitswithFoldback -OperatingRange:2.7Vto5.5V -1mSTypicalRiseTime -FastOvercurrentResponse-1.5μs(TYPICAL) -UndervoltageLockout -130μAQuiescentSupplyCurrent -1μAMaximum | GMTGlobal Mixed-mode Technology 致新科技 | | | |
PowerDistributionSwitch Features -70mΩHigh-SideMOSFET(G524A,G524B,G524C,G524D) -Availablewith4VersionsofCurrentLimitswithFoldback -OperatingRange:2.7Vto5.5V -1mSTypicalRiseTime -FastOvercurrentResponse-1.5μs(TYPICAL) -UndervoltageLockout -130μAQuiescentSupplyCurrent -1μAMaximum | GMTGlobal Mixed-mode Technology 致新科技 | | | |
PowerDistributionSwitch Features -70mΩHigh-SideMOSFET(G524A,G524B,G524C,G524D) -Availablewith4VersionsofCurrentLimitswithFoldback -OperatingRange:2.7Vto5.5V -1mSTypicalRiseTime -FastOvercurrentResponse-1.5μs(TYPICAL) -UndervoltageLockout -130μAQuiescentSupplyCurrent -1μAMaximum | GMTGlobal Mixed-mode Technology 致新科技 | | | |
PowerDistributionSwitch Features -70mΩHigh-SideMOSFET(G524A,G524B,G524C,G524D) -Availablewith4VersionsofCurrentLimitswithFoldback -OperatingRange:2.7Vto5.5V -1mSTypicalRiseTime -FastOvercurrentResponse-1.5μs(TYPICAL) -UndervoltageLockout -130μAQuiescentSupplyCurrent -1μAMaximum | GMTGlobal Mixed-mode Technology 致新科技 | | | |
PowerDistributionSwitch Features -70mΩHigh-SideMOSFET(G524A,G524B,G524C,G524D) -Availablewith4VersionsofCurrentLimitswithFoldback -OperatingRange:2.7Vto5.5V -1mSTypicalRiseTime -FastOvercurrentResponse-1.5μs(TYPICAL) -UndervoltageLockout -130μAQuiescentSupplyCurrent -1μAMaximum | GMTGlobal Mixed-mode Technology 致新科技 | | | |
PowerDistributionSwitch Features -70mΩHigh-SideMOSFET(G524A,G524B,G524C,G524D) -Availablewith4VersionsofCurrentLimitswithFoldback -OperatingRange:2.7Vto5.5V -1mSTypicalRiseTime -FastOvercurrentResponse-1.5μs(TYPICAL) -UndervoltageLockout -130μAQuiescentSupplyCurrent -1μAMaximum | GMTGlobal Mixed-mode Technology 致新科技 | | | |
PowerDistributionSwitch Features -70mΩHigh-SideMOSFET(G524A,G524B,G524C,G524D) -Availablewith4VersionsofCurrentLimitswithFoldback -OperatingRange:2.7Vto5.5V -1mSTypicalRiseTime -FastOvercurrentResponse-1.5μs(TYPICAL) -UndervoltageLockout -130μAQuiescentSupplyCurrent -1μAMaximum | GMTGlobal Mixed-mode Technology 致新科技 | | | |
PowerDistributionSwitch Features -70mΩHigh-SideMOSFET(G524A,G524B,G524C,G524D) -Availablewith4VersionsofCurrentLimitswithFoldback -OperatingRange:2.7Vto5.5V -1mSTypicalRiseTime -FastOvercurrentResponse-1.5μs(TYPICAL) -UndervoltageLockout -130μAQuiescentSupplyCurrent -1μAMaximum | GMTGlobal Mixed-mode Technology 致新科技 | | | |
PowerDistributionSwitch Features -70mΩHigh-SideMOSFET(G524A,G524B,G524C,G524D) -Availablewith4VersionsofCurrentLimitswithFoldback -OperatingRange:2.7Vto5.5V -1mSTypicalRiseTime -FastOvercurrentResponse-1.5μs(TYPICAL) -UndervoltageLockout -130μAQuiescentSupplyCurrent -1μAMaximum | GMTGlobal Mixed-mode Technology 致新科技 | | | |
PowerDistributionSwitch Features -70mΩHigh-SideMOSFET(G524A,G524B,G524C,G524D) -Availablewith4VersionsofCurrentLimitswithFoldback -OperatingRange:2.7Vto5.5V -1mSTypicalRiseTime -FastOvercurrentResponse-1.5μs(TYPICAL) -UndervoltageLockout -130μAQuiescentSupplyCurrent -1μAMaximum | GMTGlobal Mixed-mode Technology 致新科技 | | | |
PowerDistributionSwitch Features -70mΩHigh-SideMOSFET(G524A,G524B,G524C,G524D) -Availablewith4VersionsofCurrentLimitswithFoldback -OperatingRange:2.7Vto5.5V -1mSTypicalRiseTime -FastOvercurrentResponse-1.5μs(TYPICAL) -UndervoltageLockout -130μAQuiescentSupplyCurrent -1μAMaximum | GMTGlobal Mixed-mode Technology 致新科技 | | | |
PowerDistributionSwitch Features -70mΩHigh-SideMOSFET(G524A,G524B,G524C,G524D) -Availablewith4VersionsofCurrentLimitswithFoldback -OperatingRange:2.7Vto5.5V -1mSTypicalRiseTime -FastOvercurrentResponse-1.5μs(TYPICAL) -UndervoltageLockout -130μAQuiescentSupplyCurrent -1μAMaximum | GMTGlobal Mixed-mode Technology 致新科技 | | | |
PowerDistributionSwitch Features -70mΩHigh-SideMOSFET(G524A,G524B,G524C,G524D) -Availablewith4VersionsofCurrentLimitswithFoldback -OperatingRange:2.7Vto5.5V -1mSTypicalRiseTime -FastOvercurrentResponse-1.5μs(TYPICAL) -UndervoltageLockout -130μAQuiescentSupplyCurrent -1μAMaximum | GMTGlobal Mixed-mode Technology 致新科技 | | | |
PowerDistributionSwitch Features -70mΩHigh-SideMOSFET(G524A,G524B,G524C,G524D) -Availablewith4VersionsofCurrentLimitswithFoldback -OperatingRange:2.7Vto5.5V -1mSTypicalRiseTime -FastOvercurrentResponse-1.5μs(TYPICAL) -UndervoltageLockout -130μAQuiescentSupplyCurrent -1μAMaximum | GMTGlobal Mixed-mode Technology 致新科技 | | | |
PowerDistributionSwitch Features -70mΩHigh-SideMOSFET(G524A,G524B,G524C,G524D) -Availablewith4VersionsofCurrentLimitswithFoldback -OperatingRange:2.7Vto5.5V -1mSTypicalRiseTime -FastOvercurrentResponse-1.5μs(TYPICAL) -UndervoltageLockout -130μAQuiescentSupplyCurrent -1μAMaximum | GMTGlobal Mixed-mode Technology 致新科技 | | | |
PowerDistributionSwitch Features -70mΩHigh-SideMOSFET(G524A,G524B,G524C,G524D) -Availablewith4VersionsofCurrentLimitswithFoldback -OperatingRange:2.7Vto5.5V -1mSTypicalRiseTime -FastOvercurrentResponse-1.5μs(TYPICAL) -UndervoltageLockout -130μAQuiescentSupplyCurrent -1μAMaximum | GMTGlobal Mixed-mode Technology 致新科技 | | | |
PowerDistributionSwitch Features -70mΩHigh-SideMOSFET(G524A,G524B,G524C,G524D) -Availablewith4VersionsofCurrentLimitswithFoldback -OperatingRange:2.7Vto5.5V -1mSTypicalRiseTime -FastOvercurrentResponse-1.5μs(TYPICAL) -UndervoltageLockout -130μAQuiescentSupplyCurrent -1μAMaximum | GMTGlobal Mixed-mode Technology 致新科技 | | | |
PowerDistributionSwitch Features -70mΩHigh-SideMOSFET(G524A,G524B,G524C,G524D) -Availablewith4VersionsofCurrentLimitswithFoldback -OperatingRange:2.7Vto5.5V -1mSTypicalRiseTime -FastOvercurrentResponse-1.5μs(TYPICAL) -UndervoltageLockout -130μAQuiescentSupplyCurrent -1μAMaximum | GMTGlobal Mixed-mode Technology 致新科技 | | | |
PowerDistributionSwitch Features -70mΩHigh-SideMOSFET(G524A,G524B,G524C,G524D) -Availablewith4VersionsofCurrentLimitswithFoldback -OperatingRange:2.7Vto5.5V -1mSTypicalRiseTime -FastOvercurrentResponse-1.5μs(TYPICAL) -UndervoltageLockout -130μAQuiescentSupplyCurrent -1μAMaximum | GMTGlobal Mixed-mode Technology 致新科技 | | | |
PowerDistributionSwitch Features -70mΩHigh-SideMOSFET(G524A,G524B,G524C,G524D) -Availablewith4VersionsofCurrentLimitswithFoldback -OperatingRange:2.7Vto5.5V -1mSTypicalRiseTime -FastOvercurrentResponse-1.5μs(TYPICAL) -UndervoltageLockout -130μAQuiescentSupplyCurrent -1μAMaximum | GMTGlobal Mixed-mode Technology 致新科技 | | | |
PowerDistributionSwitch Features -70mΩHigh-SideMOSFET(G524A,G524B,G524C,G524D) -Availablewith4VersionsofCurrentLimitswithFoldback -OperatingRange:2.7Vto5.5V -1mSTypicalRiseTime -FastOvercurrentResponse-1.5μs(TYPICAL) -UndervoltageLockout -130μAQuiescentSupplyCurrent -1μAMaximum | GMTGlobal Mixed-mode Technology 致新科技 | | | |
PowerDistributionSwitch Features -70mΩHigh-SideMOSFET(G524A,G524B,G524C,G524D) -Availablewith4VersionsofCurrentLimitswithFoldback -OperatingRange:2.7Vto5.5V -1mSTypicalRiseTime -FastOvercurrentResponse-1.5μs(TYPICAL) -UndervoltageLockout -130μAQuiescentSupplyCurrent -1μAMaximum | GMTGlobal Mixed-mode Technology 致新科技 | | | |
PowerDistributionSwitch Features -70mΩHigh-SideMOSFET(G524A,G524B,G524C,G524D) -Availablewith4VersionsofCurrentLimitswithFoldback -OperatingRange:2.7Vto5.5V -1mSTypicalRiseTime -FastOvercurrentResponse-1.5μs(TYPICAL) -UndervoltageLockout -130μAQuiescentSupplyCurrent -1μAMaximum | GMTGlobal Mixed-mode Technology 致新科技 | | | |
PowerDistributionSwitch Features -70mΩHigh-SideMOSFET(G524A,G524B,G524C,G524D) -Availablewith4VersionsofCurrentLimitswithFoldback -OperatingRange:2.7Vto5.5V -1mSTypicalRiseTime -FastOvercurrentResponse-1.5μs(TYPICAL) -UndervoltageLockout -130μAQuiescentSupplyCurrent -1μAMaximum | GMTGlobal Mixed-mode Technology 致新科技 | | | |
PowerDistributionSwitch Features -70mΩHigh-SideMOSFET(G524A,G524B,G524C,G524D) -Availablewith4VersionsofCurrentLimitswithFoldback -OperatingRange:2.7Vto5.5V -1mSTypicalRiseTime -FastOvercurrentResponse-1.5μs(TYPICAL) -UndervoltageLockout -130μAQuiescentSupplyCurrent -1μAMaximum | GMTGlobal Mixed-mode Technology 致新科技 | | | |
PowerDistributionSwitch Features -70mΩHigh-SideMOSFET(G524A,G524B,G524C,G524D) -Availablewith4VersionsofCurrentLimitswithFoldback -OperatingRange:2.7Vto5.5V -1mSTypicalRiseTime -FastOvercurrentResponse-1.5μs(TYPICAL) -UndervoltageLockout -130μAQuiescentSupplyCurrent -1μAMaximum | GMTGlobal Mixed-mode Technology 致新科技 | | | |
PowerDistributionSwitch Features -70mΩHigh-SideMOSFET(G524A,G524B,G524C,G524D) -Availablewith4VersionsofCurrentLimitswithFoldback -OperatingRange:2.7Vto5.5V -1mSTypicalRiseTime -FastOvercurrentResponse-1.5μs(TYPICAL) -UndervoltageLockout -130μAQuiescentSupplyCurrent -1μAMaximum | GMTGlobal Mixed-mode Technology 致新科技 | | | |
PowerDistributionSwitch Features -70mΩHigh-SideMOSFET(G524A,G524B,G524C,G524D) -Availablewith4VersionsofCurrentLimitswithFoldback -OperatingRange:2.7Vto5.5V -1mSTypicalRiseTime -FastOvercurrentResponse-1.5μs(TYPICAL) -UndervoltageLockout -130μAQuiescentSupplyCurrent -1μAMaximum | GMTGlobal Mixed-mode Technology 致新科技 | | | |
PowerDistributionSwitch Features -70mΩHigh-SideMOSFET(G524A,G524B,G524C,G524D) -Availablewith4VersionsofCurrentLimitswithFoldback -OperatingRange:2.7Vto5.5V -1mSTypicalRiseTime -FastOvercurrentResponse-1.5μs(TYPICAL) -UndervoltageLockout -130μAQuiescentSupplyCurrent -1μAMaximum | GMTGlobal Mixed-mode Technology 致新科技 | | | |
PowerDistributionSwitch Features -70mΩHigh-SideMOSFET(G524A,G524B,G524C,G524D) -Availablewith4VersionsofCurrentLimitswithFoldback -OperatingRange:2.7Vto5.5V -1mSTypicalRiseTime -FastOvercurrentResponse-1.5μs(TYPICAL) -UndervoltageLockout -130μAQuiescentSupplyCurrent -1μAMaximum | GMTGlobal Mixed-mode Technology 致新科技 | | | |
PowerDistributionSwitch Features -70mΩHigh-SideMOSFET(G524A,G524B,G524C,G524D) -Availablewith4VersionsofCurrentLimitswithFoldback -OperatingRange:2.7Vto5.5V -1mSTypicalRiseTime -FastOvercurrentResponse-1.5μs(TYPICAL) -UndervoltageLockout -130μAQuiescentSupplyCurrent -1μAMaximum | GMTGlobal Mixed-mode Technology 致新科技 | | | |
PowerDistributionSwitch Features -70mΩHigh-SideMOSFET(G524A,G524B,G524C,G524D) -Availablewith4VersionsofCurrentLimitswithFoldback -OperatingRange:2.7Vto5.5V -1mSTypicalRiseTime -FastOvercurrentResponse-1.5μs(TYPICAL) -UndervoltageLockout -130μAQuiescentSupplyCurrent -1μAMaximum | GMTGlobal Mixed-mode Technology 致新科技 | | | |
PowerDistributionSwitch Features -70mΩHigh-SideMOSFET(G524A,G524B,G524C,G524D) -Availablewith4VersionsofCurrentLimitswithFoldback -OperatingRange:2.7Vto5.5V -1mSTypicalRiseTime -FastOvercurrentResponse-1.5μs(TYPICAL) -UndervoltageLockout -130μAQuiescentSupplyCurrent -1μAMaximum | GMTGlobal Mixed-mode Technology 致新科技 | | | |
PowerDistributionSwitch Features -70mΩHigh-SideMOSFET(G524A,G524B,G524C,G524D) -Availablewith4VersionsofCurrentLimitswithFoldback -OperatingRange:2.7Vto5.5V -1mSTypicalRiseTime -FastOvercurrentResponse-1.5μs(TYPICAL) -UndervoltageLockout -130μAQuiescentSupplyCurrent -1μAMaximum | GMTGlobal Mixed-mode Technology 致新科技 | | |
G524产品属性
- 类型
描述
- 型号
G524
- 制造商
Inter-Market Inc(IMLEC)
- 功能描述
Lamps/Indicators ;RoHS
- Compliant
Yes
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
GTM |
20+ |
SOT23-5 |
830 |
原装现货 |
|||
GMT |
2018+ |
SOT23-5 |
6000 |
全新原装正品现货,假一赔佰 |
|||
GMT |
21+ |
SOT235 |
8888888 |
全新原装现货价格优惠可开票 |
|||
GMT |
23+ |
SOT23-5 |
20000 |
原厂原装正品现货 |
|||
国产替代 |
2012+ |
SOT23-5 |
10000 |
全新原装进口自己库存优势 |
|||
GMT |
2020+ |
SOT153 |
12000 |
100%进口原装正品公司现货库存 |
|||
GMT |
20+ |
SOT23-5 |
49000 |
原装优势主营型号-可开原型号增税票 |
|||
GMT |
2016+ |
SOT23-5 |
6000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
GMT |
23+ |
NA |
1227 |
专做原装正品,假一罚百! |
|||
TI |
22+ |
SOT23-5 |
30000 |
原装正品 |
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G526是双集成高侧电源开关具有独立的使能和标志功能，优化自供电和通用串行总线供电总线（USB）的应用程序。G526满足以下USB要求：开关的低导通电阻符合USB电压下降的要求;故障电流被限制在通常750毫安，远低于UL25VA安全要求;标志输出可指示故障条件当地的USB控制器。软启动消除了上游端口上的瞬间电压下降，可能会发生当开关在总线供电启用应用。附加功能包括热关断，以防止从高电流负载灾难性的开关失灵，欠压锁定（UVLO），确保该设备仍处于关闭状态，除非有一个有效的输入电压目前，使能输入，既兼容3.3V和5V逻辑。G526是在高电平有效和低电平有效能够在8引脚S
2012-11-14
DdatasheetPDF页码索引
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