| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
G50N10 | Trench Mosfet | GOFORD 谷峰半导体 |   | |
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 100V, 50A, RDS(ON) = 30mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package. ■ Lead free product is acquired. | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 50A, RDS(ON) = 30mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 50A, RDS(ON) = 30mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 100V, 50A, RDS(ON) = 30mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package. ■ Lead free product is acquired. | CET 华瑞 | | ||
N-CHANNEL MOSFET in a TO-220 Plastic Package 文件：866.59 Kbytes Page：6 Pages | FOSHAN 蓝箭电子 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
2016+ |
TO247 |
6000 |
公司只做原装,假一罚十,可开17%增值税发票! |
|||
i |
25+ |
to247 |
2828 |
原装正品,假一罚十! |
|||
英飞凌 |
25+ |
TO-3P |
18000 |
原厂直接发货进口原装 |
|||
FAIRCHILD |
2025+ |
TO-3PL |
4675 |
全新原厂原装产品、公司现货销售 |
|||
FSC |
18+ |
TO-247 |
85600 |
保证进口原装可开17%增值税发票 |
|||
FAIRCHILD |
TO-3PL |
8560 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
FAIRCHILD |
25+ |
TO-3PL |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
Infineon(英飞凌) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
23+ |
TO-3PL |
65480 |
|||||
INFINEON |
23+ |
TO-3P |
6200 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
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