N and P Channel Enhancement Mode Power MOSFET

Description This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Application l Power switch l DC/DC converters

Trench Mosfet

N and P-Channel Enhancement Mode Power MOSFET

Description The 4616 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS = 30V,ID =8.0A RDS(ON)

Ultrahigh Precision Adjustable Current Limited Load Switch with Fault Flag

Features  Input voltage: 2.4 V to 5.5 V  Programmable over-current limit setting: 300 mA to 1.6 A  ±5 current limit precision at 750 mA  Fast transient response: 2 s response to short circuit  Low quiescent current:  10 A typical while enabled  1 A maximum with switch off  130 m

Quick exhaust valve

文件：80.25 Kbytes Page：1 Pages

Heyco®-Tite EMC Brass Liquid Tight Cordgrips

文件：340.26 Kbytes Page：1 Pages

VHB Tape - Specialty Tapes

文件：735.51 Kbytes Page：9 Pages