位置：首页 > IC中文资料第8658页 > G425SD
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
G425SD | The G425SD is designed for low power rectification 文件：232.63 Kbytes Page：2 Pages | ETL 亚历电子 |   | |
G425SD | SURFACE MOUNT, SCHOTTKY BARRIER DIODE VOLTAGE 40V, CURRENT 0.1A 文件：227.66 Kbytes Page：2 Pages | GTM 勤益投资控股 | | |
G425SD | SURFACE MOUNT, SCHOTTKY BARRIER DIODE VOLTAGE 40V, CURRENT 0.1A | GTM 勤益投资控股 | | |
丝印代码：P5；NPN 25 GHz wideband transistor DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. FEATURES • Very high power gain • Low noise figure • High transition frequency • Emitter is thermal lead • Low feedback capacitance. APPLI | PHILIPS 飞利浦 | | ||
Ultra Low Noise Wideband Op Amp 文件：1.27511 Mbytes Page：9 Pages | NSC 国半 | | ||
Ultra Low Noise Wideband Op Amp 文件：1.27511 Mbytes Page：9 Pages | NSC 国半 | | ||
Ultra Low Noise Wideband Op Amp 文件：1.27511 Mbytes Page：9 Pages | NSC 国半 | | ||
Ultra Low Noise Wideband Op Amp 文件：1.27511 Mbytes Page：9 Pages | NSC 国半 | |
G425SD产品属性
- 类型
描述
- 型号
G425SD
- 制造商
GTM
- 制造商全称
GTM
- 功能描述
SURFACE MOUNT, SCHOTTKY BARRIER DIODE VOLTAGE 40V, CURRENT 0.1A
G425SD芯片相关品牌
G425SD规格书下载地址
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DdatasheetPDF页码索引
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