NPN 25 GHz wideband transistor

DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. FEATURES • Very high power gain • Low noise figure • High transition frequency • Emitter is thermal lead • Low feedback capacitance. APPLI

Microwave, low noise, SiGe NPN HBT

Microwave, low noise, SiGe NPN HBT UHF 25 GHZ, low noise transistor with SiGe HBT technique, high power gain, low noise and large dynamic range. The adoption of subminiature SOT-343R package, especially suitable for high density surface patch installation, mainly for the VHF, UHF broadband high

NPN Transistors

■ Features ● Very high power gain ● Low noise figure ● 25 GHz wideband transistor ● Emitter is thermal lead ● Low feedback capacitance.

RF Manual 16th edition

isc Silicon NPN RF Transistor

DESCRIPTION • High Power Gain • High Current Gain Bandwidth Product • Low Noise Figure • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for use in RF wideband amplifiers and oscillators.

GENERAL PURPOSE TRANSISTOR RF NPN TRANSISTOR MICROWAVE LOW NOISE

DESCRIPTION UHF 25 GHz, low noise transistor with SiGe HBT technique, high power gain, low noise and large dynamic range. The adoption of subminiature SOT-343 package, especially suitable for high density surface patch installation, mainly for the VHF, UHF broadband high frequency low noise ampli

NPN 25 GHz wideband transistor

封装/外壳：SC-82A，SOT-343 包装：卷带（TR） 描述：RF TRANS NPN 4.5V 25GHZ CMPAK-4 分立半导体产品 晶体管 - 双极（BJT）- 射频

封装/外壳：SC-82A，SOT-343 包装：卷带（TR） 描述：RF TRANS NPN 4.5V 25GHZ CMPAK-4 分立半导体产品 晶体管 - 双极（BJT）- 射频

NPN 25 GHz wideband transistor

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NPN 25 GHz wideband transistor

文件：96.25 Kbytes Page：12 Pages

晶体管

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