| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
G33N03S | 丝印代码：G33N03；N-Channel Enhancement Mode Power MOSFET Description The G33N03S uses advanced trench technology to provide excellent R DS(ON) , low gate charge. It can be used in a wide variety of applications. Application Power switch DC/DC converters | GOFORD 谷峰半导体 |   | |
G33N03S | 30V N Channel TRENCH MOSFET | GOFORD 谷峰半导体 | | |
100 Avalanche Tested 文件：227.09 Kbytes Page：7 Pages | SEMIHOW | | ||
Superior Avalanche Rugged Technology 文件：995.88 Kbytes Page：8 Pages | SEMIHOW | |
G33N03S产品属性
- 类型
描述
- Configuration：
N channel
- ESD：
NO
- VDS(min)：
30V
- Id at 25℃(max)：
13A
- PD(max)：
2.5W
- Vgs(th)typ(V)：
0.9V
- RDS(on)(typ)(@10V)：
9mΩ
- RDS(on)(typ)(@4.5V)：
10.5mΩ
- Qg(nC)：
13
- Ciss：
1550
- Crss：
180
G33N03S规格书下载地址
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