| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
丝印代码：G30N04；N-Channel Enhancement Mode Power MOSFET Description The G30N04D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 |   | ||
G30N04 | Trench Mosfet | GOFORD 谷峰半导体 | | |
40V N Channel TRENCH MOSFET | GOFORD 谷峰半导体 | | ||
40 V – 30 A – Dual N-channel Power MOS FET Application: Automotive Description NP30N04QUK is a dual N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 8 m MAX. (VGS = 10 V, ID = 15 A) Low Ciss: Ciss = 1600 pF TYP. (VDS = 25 V) Designed for automotive application a | RENESAS 瑞萨 | | ||
丝印代码：HM30N04D；N-Channel Enhancement Mode Power MOSFET 文件：915.53 Kbytes Page：7 Pages | HMSEMI 华之美半导体 | | ||
丝印代码：HM30N04Q；N-Channel Enhancement Mode Power MOSFET 文件：1.24835 Mbytes Page：7 Pages | HMSEMI 华之美半导体 | | ||
N-Channel MOSFET uses advanced trench technology 文件：2.81873 Mbytes Page：6 Pages | DOINGTER 杜因特 | | ||
Superior Avalanche Rugged Technology 文件：867.85 Kbytes Page：8 Pages | SEMIHOW | |
G30N04产品属性
- 类型
描述
- Configuration：
N channel
- ESD：
NO
- VDS(max)：
45V
- Id at 25℃(max)：
30A
- PD(max)：
20W
- Vgs(th)typ(V)：
1.47V
- RDS(on)(typ)(@10V)：
9mΩ~12mΩ
- RDS(on)(typ)(@4.5V)：
10.5mΩ~18mΩ
- Qg(nC)：
30
- Ciss：
1780
- Crss：
160
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TELIT |
21+ |
SMD |
1062 |
只做原装正品,不止网上数量,欢迎电话微信查询! |
|||
罗兰/FERRAZ |
23+ |
module |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
WESTCODE |
24+ |
MODULE |
1000 |
全新原装现货 |
|||
CSR |
23+ |
BGAQFP |
8659 |
原装公司现货!原装正品价格优势. |
|||
TAOGLAS |
2450+ |
SOP |
6540 |
只做原厂原装正品终端客户免费申请样品 |
|||
WESTCODE |
23+ |
模块 |
240 |
全新原装正品,量大可订货!可开17%增值票!价格优势! |
|||
24+ |
QFN |
250 |
|||||
TELIT |
25+ |
18 |
公司优势库存 热卖中! |
||||
XP Power |
25+ |
N/A |
12000 |
一级代理保证进口原装正品假一罚十价格合理 |
|||
MICREL |
05/06+ |
QFN6 |
683 |
全新原装100真实现货供应 |
G30N04规格书下载地址
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