| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
G30N04 | Trench Mosfet | GOFORD 谷峰半导体 |   | |
N-Channel Enhancement Mode Power MOSFET Description The G30N04D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
40V N Channel TRENCH MOSFET | GOFORD 谷峰半导体 | | ||
40 V – 30 A – Dual N-channel Power MOS FET Application: Automotive Description NP30N04QUK is a dual N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 8 m MAX. (VGS = 10 V, ID = 15 A) Low Ciss: Ciss = 1600 pF TYP. (VDS = 25 V) Designed for automotive application a | RENESAS 瑞萨 | | ||
N-Channel Enhancement Mode Power MOSFET 文件：915.53 Kbytes Page：7 Pages | HMSEMI 华之美半导体 | | ||
N-Channel Enhancement Mode Power MOSFET 文件：1.24835 Mbytes Page：7 Pages | HMSEMI 华之美半导体 | | ||
N-Channel MOSFET uses advanced trench technology 文件：2.81873 Mbytes Page：6 Pages | DOINGTER 杜因特 | | ||
Superior Avalanche Rugged Technology 文件：867.85 Kbytes Page：8 Pages | SEMIHOW | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
哈里斯 |
23+ |
TO-3P |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
INF |
23+ |
TO-3P |
65480 |
||||
哈里斯 |
05+ |
TO-247 |
328 |
全新原装 绝对有货 |
|||
24+ |
N/A |
76000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
HARRIS |
23+ |
TO-3P |
3000 |
原装正品假一罚百!可开增票! |
|||
Infineon(英飞凌) |
25+ |
标准封装 |
8800 |
公司只做原装,详情请咨询 |
|||
Infineon(英飞凌) |
24+ |
N/A |
9855 |
原装正品现货支持实单 |
|||
GOFORD |
10 |
||||||
FAIRCHILD/仙童 |
21+ |
TO247 |
1062 |
只做原装正品,不止网上数量,欢迎电话微信查询! |
|||
FAIRCHILD/仙童 |
25+ |
TO-247 |
17 |
原装正品,假一罚十! |
G30N04规格书下载地址
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