丝印代码：G220；Zener Diodes

文件：1.54174 Mbytes Page：3 Pages

SIDACs

SIDACs IT(RSM) = 1.0 Amperes VBO = 95 thru 280 Volts

Silicon Z?밆iodes

FEATURES • High reliability • Voltage range 10 V to 270 V Fits onto 5 mm SMD footpads • Wave and reflow solderable • Glass passivated junction

SIDACs

SIDACs IT(RSM) = 1.0 Amperes VBO = 95 thru 280 Volts

Ultra320 Multi-mode LVD/SE SCSI Terminator

General Description The G220 Multi-mode LVD/SE SCSI terminator provides a smooth transition into the next generation of the SCSI Parallel Interface (SPI-4). It automatically senses the bus, via DIFFSENS, and switches the termination to either single-ended (SE) or low voltage differential (LVD) SC

Ultra320 Multi-mode LVD/SE SCSI Terminator

Thyristors-SIDAC

丝印代码：G220P02；P-Channel Enhancement Mode Power MOSFET

Description The G220P02D2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

丝印代码：G220P03D；DUAL P-Channel Enhancement Mode Power MOSFET

Description The G220P03D32 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

丝印代码：G220P03D；DUAL P-Channel Enhancement Mode Power MOSFET

Description The G220P03S2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

丝印代码：G2202；MIXED SIGNAL MICROCONTROLLER

1FEATURES 23• Low Supply Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architectur

丝印代码：G2202；MIXED SIGNAL MICROCONTROLLER

1FEATURES 23• Low Supply Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architectur

丝印代码：G2202；MIXED SIGNAL MICROCONTROLLER

1FEATURES 23• Low Supply Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architectur

丝印代码：G2202；MIXED SIGNAL MICROCONTROLLER

1FEATURES 23• Low Supply Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architectur

丝印代码：G2202；MIXED SIGNAL MICROCONTROLLER

1FEATURES 23• Low Supply Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architectur

丝印代码：G2202；MIXED SIGNAL MICROCONTROLLER

1FEATURES 23• Low Supply Voltage Range: 1.8 V to 3.6 V • Ultra-Low Power Consumption – Active Mode: 220 μA at 1 MHz, 2.2 V – Standby Mode: 0.5 μA – Off Mode (RAM Retention): 0.1 μA • Five Power-Saving Modes • Ultra-Fast Wake-Up From Standby Mode in Less Than 1 μs • 16-Bit RISC Architectur

RF POWER GAN TRANSISTOR

General Description Polyfets GAN (on SiC) HEMT power transistors contain no internal matching; making them suitable for both broadband and narrow band applications. The use of a thermally enhanced package enables this device to have superior heat dissipation properties. The high drain break down

7-Channel DC-DC Converter for DSC

General Description The G2202/G2202B provide a complete power supply solution for digital cameras. They improve performance, component count, and size compared to other multi-channel controllers in 2-cell AA, 1-cell Li-Ion, and multi-battery designs. On-chip MOSFETs provide up to 92~95 efficiency

7-Channel DC-DC Converter for DSC

General Description The G2204 provide a complete power supply solution for digital cameras. They improve performance, component count, and size compared to other multi-channel controllers in 2-cell AA, 1-cell Li-Ion, and multi-battery designs. On-chip MOSFETs provide up to 92~95 efficiency for cr

76 Channels PMIC for DSC

General Description The G2205 provide a complete power supply solution for digital cameras. They improve performance, component count, and size compared to other multi-channel controllers in 2-cell AA, 1-cell Li-Ion, and multi-battery designs. On-chip MOSFETs provide up to 92~95 efficiency for cr

63 Channels PMU and Li-ion Battery Charger for DSC

General Description The G2206 provide a complete power supply solution for digital cameras. They improve performance, component count, and size compared to other multi-channel controllers in 1-cell Li-Ion. On-chip MOSFETs provide up to 92~95 efficiency for critical power supplies. All channels DC

66 Channels PMU for DSC

General Description The G2207 provide a complete power supply solution for digital cameras. They improve performance, component count, and size compared to other multi-channel controllers in 1-cell Li-Ion. On-chip MOSFETs provide up to 92~95 efficiency for critical power supplies. All channels DC

Color band denotes cathode end

SIDACs IT(RSM) = 1.0 Amperes VBO = 95 thru 280 Volts FEATURES : * Pb / RoHS Free

SIDACs

SIDACs IT(RSM) = 1.0 Amperes VBO = 95 thru 280 Volts FEATURES : * Pb / RoHS Free

Ultra320 Multi-mode LVD/SE SCSI Terminator

General Description The G220 Multi-mode LVD/SE SCSI terminator provides a smooth transition into the next generation of the SCSI Parallel Interface (SPI-4). It automatically senses the bus, via DIFFSENS, and switches the termination to either single-ended (SE) or low voltage differential (LVD) SC

Screw-In Rubber Pocket Bumpers

文件：120.09 Kbytes Page：1 Pages

Multi-Channel PMIC for DSC

Axial Vitreous Leaded Wirewound Resistors

文件：133.1 Kbytes Page：7 Pages

封装/外壳：轴向 包装：剪切带（CT）带盒（TB） 描述：RES 1.0K OHM 5% WW 电阻器 通孔式电阻器

封装/外壳：轴向 包装：散装 描述：RES 0.1 OHM 5% WW 电阻器 通孔式电阻器

Screw-In Rubber Pocket Bumpers

文件：120.09 Kbytes Page：1 Pages

Screw-In Rubber Pocket Bumpers

文件：120.09 Kbytes Page：1 Pages

Fluid chilled or hot water, up to 60 glycol, steam

文件：1.46815 Mbytes Page：6 Pages

Fluid chilled or hot water, up to 60 glycol, steam

文件：1.3523 Mbytes Page：6 Pages

Fluid chilled or hot water, up to 60 glycol, steam

文件：1.46437 Mbytes Page：6 Pages

Fluid chilled or hot water, up to 60 glycol, steam

文件：1.46436 Mbytes Page：6 Pages

2 AMPERE SCHOTTKY BARRIER RECTIFIERS(VOLTAGE - 20 to 100 Volts CURRENT - 2.0 Amperes)

VOLTAGE 20 to 100 Volts CURRENT 2.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • For use in low voltage,high frequency inverters

AXIAL LEAD BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR DEVICE

FEATURES • Protects by limiting voltages and shunting surge currents away from sensitive circuits • Designed for telecommunications applications such as line cards, modems, PBX, FAX, LAN,VHDSL • Helps meet standards such as GR1089, ITU K.20, IEC950, UL1459&50, FCC part 68 • Low capacitance

1.75 mm X 7.0 mm Series

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Silicon planar type

文件：49.05 Kbytes Page：4 Pages

Silicon planar type

文件：41.87 Kbytes Page：2 Pages