位置:首页 > IC中文资料 > G02P06

型号 功能描述 生产厂家 企业 LOGO 操作
G02P06

丝印代码:G02P06;P-Channel Enhancement Mode Power MOSFET

Description The G02P06 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

丝印代码:G02P06;P-Channel Enhancement Mode Power MOSFET

Description The G02P06A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

G02P06

-60V P Channel TRENCH MOSFET

GOFORD

谷峰半导体

High Frequency Point-of-Load Synchronous Buck Converter.

文件:2.39895 Mbytes Page:5 Pages

WIINSOK

微硕半导体

G02P06产品属性

  • 类型

    描述

  • Configuration:

    P channel

  • ESD:

    NO

  • VDS(min):

    -60V

  • Id at 25℃(max):

    -1.6A

  • PD(max):

    1.5W

  • Vgs(th)typ(V):

    -1.8V

  • RDS(on)(typ)(@10V):

    150mΩ

  • RDS(on)(typ)(@4.5V):

    180mΩ

  • Qg(nC):

    11.3

  • Ciss:

    573

  • Crss:

    23

更新时间:2026-8-3 11:06:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
26+
N/A
75000
一级代理-主营优势-实惠价格-不悔选择

G02P06数据表相关新闻