RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 28 volt base station equipment.

N-CDMA Application

• Typical Single-Carrier N-CDMA Performance @ 880 MHz, VDD = 28 Volts,

IDQ = 950 mA, Pout = 27 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging, Traffic

Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @

0.01 Probability on CCDF.

Power Gain — 20.2 dB

Drain Efficiency — 31

ACPR @ 750 kHz Offset = -45.7 dBc in 30 kHz Bandwidth

• Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness

GSM EDGE Application

• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700 mA,

Pout = 60 Watts Avg., Full Frequency Band (865-960 MHz or 920-960 MHz)

Power Gain — 20 dB

Drain Efficiency — 40

Spectral Regrowth @ 400 kHz Offset = -63 dBc

Spectral Regrowth @ 600 kHz Offset = -78 dBc

EVM — 1.8 rms

GSM Application

• Typical GSM Performance: VDD = 28 Volts, IDQ = 700 mA, Pout =

125 Watts, Full Frequency Band (920-960 MHz)

Power Gain — 19 dB

Drain Efficiency — 62

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Integrated ESD Protection

• 225°C Capable Plastic Package

• RoHS Compliant

• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.