2450 MHz, 190 W, 28 V CW LATERAL N-CHANNEL RF POWER MOSFET

Designed primarily for large-signal output applications at 2450 MHz. Device is suitable for use in industrial, medical and scientific applications.

• Typical CW Performance at 2450 MHz, VDD = 28 Volts, IDQ = 1900 mA, Pout = 190 Watts

Power Gain — 13.2 dB

Drain Efficiency — 46.2

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2340 MHz, 190 Watts CW Output Power

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 VDD Operation

• Integrated ESD Protection

• RoHS Compliant

• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.